Nuflare Technology, Inc.

D2s, Inc.

Hironobu Matsumoto

P Jeffrey Ungar

Hideo Tsuchiya

Yasuo Kato

Shigehiro Hara

Noriaki Nakayamada

Kenichi Yasui

Shinji Sakamoto

Hiroshi Yamashita

Saori Gomi

Takao Tamura

Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Methods for modeling of a design in reticle enhancement technology

A charged particle beam writing apparatus includes an enlarged pattern forming circuitry to form an enlarged pattern by enlarging a figure pattern to be written, depending on a shift number which is defined by the number of writing positions shifted in the x or y direction in plural writing positions where multiple writing is performed while shifting the position, a reduced pattern forming circuitry to form a reduced pattern by reducing the figure pattern, depending on the shift number, and an irradiation coefficient calculation circuitry to calculate an irradiation coefficient for modulating a dose of a charged particle beam irradiating each of small regions, using the enlarged and reduced patterns.

Charged particle beam writing apparatus and method for calculating irradiation coefficient

A charged particle beam writing apparatus includes a storage unit to store writing data of a region to be written in a target object, a first dividing unit to read the writing data and divide the region to be written into at least one first data processing region that overlaps with at least a first region where a pattern has been arranged, and at least one second data processing region that overlaps with a second region where no pattern is arranged without overlapping with the first region, a data processing unit to perform data processing of predetermined data processing contents for at least one first data processing region without performing the data processing for at least one second data processing region, and a writing unit to write a pattern on the target object, based on processed data.

Charged particle beam writing apparatus and charged particle beam writing method

According to one aspect of the present invention, a multiple charged particle beam lithography apparatus includes a circuitry configured to divide a lithography region of a target object into a plurality of pixel regions having a mesh shape and being irradiated with multiple charged particle beams; a circuitry configured to group the plurality of pixel regions into a plurality of pixel blocks configured with at least one pixel region; a circuitry configured to correct position deviation in unit of a pixel block for each pixel block of the plurality of pixel blocks; a dose calculating processing circuitry configured to calculate a dose being irradiated on the pixel concerned for each pixel where the position deviation is corrected; and a mechanism configured to write a pattern on the target object by using the multiple charged particle beams so that each pixel is illuminated with the calculated dose.

Multiple charged particle beam lithography apparatus and multiple charged particle beam lithography method

In one embodiment, a charged particle beam drawing apparatus includes a drawing unit that draws a pattern in a drawing area on a substrate and a control processing circuitry that controls the drawing unit via a process including receiving drawing data with a hierarchical correction map input to the control processing circuitry. The drawing data with the hierarchical map includes a plurality of files in which division maps are respectively described in files in units of subframes. Each division map includes dose correction information associated with corresponding one of blocks of the drawing area. The process further includes generating shot data by performing a data conversion process on the drawing data, reading a division map corresponding to a block in the area to be drawn from the hierarchical correction map, calculating a dose, and controlling the drawing unit based on the shot data and the calculated dose.

Charged particle beam drawing apparatus and drawing data generation method

A charged particle beam writing apparatus includes plural conversion processing units to perform data conversion processing in parallel for writing data of each processing region obtained by virtually dividing the writing region of a target object into plural processing regions, a transmission unit to input a part of processing data of one of the plural processing regions for which data conversion processing has been performed, one part at a time, totally as n divided processing data, and sequentially transmit the n divided processing data such that the (n&#x2212;1) th divided processing data is transmitted while the n-th divided processing data is being input, a deflection control circuit to control a deflection amount for deflecting a charged particle beam, based on one of the n divided processing data transmitted sequentially, and a writing unit to write a pattern by deflecting the charged particle beam based on the deflection amount.

A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged; and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated.

Multi charged particle beam writing apparatus, and multi charged particle beam writing method

A charged particle beam writing apparatus includes a shot division unit configured to divide a figure defined in layout data into a plurality of shot figures each having a size which can be irradiated by one shot of a charged particle beam, a shot data generating unit configured to generate each shot data for each shot figure of the plurality of shot figures, where a number of times of generating the each shot data equals a number of times of multiple writing of the each shot figure of the plurality of shot figures, such that multiplicity of the multiple writing is variable per the each shot figure, and a writing unit configured to perform the multiple writing of the each shot figure onto a target workpiece, in accordance with the number of times of the each shot data generated for the each shot figure, using a charged particle beam.

A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged, and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated.

A charged particle beam writing apparatus includes a dose calculation unit to calculate, for each of a plurality of first small regions made by virtually dividing a writing region of a target object to be mesh-like regions each having a size larger than an influence radius of forward scattering of a charged particle beam, a dose of the charged particle beam shot in a first small region concerned of the plurality of first small regions, by using a dose formula which is different depending on a shot type classified by whether a shot figure formed by the charged particle beam is at an edge of a figure pattern or inside the figure pattern in the first small region concerned, and a writing unit to write, for each of the plurality of first small regions, the figure pattern with a dose calculated by the dose formula.

A beam writing apparatus according to an embodiment includes a selection unit configured to select a dose equation from a plurality of dose equations for calculating a dose of a beam, for each small region of a plurality of small regions made by virtually dividing a writing region of a target workpiece into mesh-like regions, a dose calculation unit configured to calculate a dose of a beam which is shot into a small region of the plurality of small regions, by using a selected dose equation, for the each small region, and a writing unit configured to write a desired pattern in the small region, by using a calculated dose, for the each small region.

A charged particle beam writing apparatus according to an embodiment, includes a dose coefficient calculation unit to calculate an n-th dose correction coefficient in iterative calculation of a charged particle beam to be shot in a small region concerned by the iterative calculation, for each small region of small regions made by virtually dividing into mesh-like regions, a change rate calculation unit to calculate, for each small region, a rate of change from an (n-1)th dose correction coefficient to the n-th dose correction coefficient calculated in the iterative calculation, as an n-th change rate, a correction calculation unit to correct, for each small region, the n-th dose correction coefficient by using the n-th change rate, and a dose calculation unit to calculate, for each small region, a dose of a charged particle beam to be shot in a small region concerned by using the n-th dose correction coefficient corrected.

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Kanagawa, Japan

Hironobu Matsumoto