Jsr Corporation

Jsp Corporation

Hiromitsu Nakashima

Yukio Nishimura

Hiroki Nakagawa

Gouji Wakamatsu

Kazuo Nakahara

Takeo Shioya

Masafumi Hori

Kazuki Kasahara

Kentarou Gotou

Takanori Kawakami

Mitsuo Sato

Masafumi Yoshida

Reiko Kimura

Daita Kouno

Hiroshi Ikeda

Yuusuke Asano

Yasuhiko Matsuda

Yoshifumi Oizumi

Tomohiko Sakurai

Toru Kimura

Takayuki Tsuji

Yusuke Asano

Hiromu Miyata

Sosuke Osawa

Hiroshi Dougauchi

Mitsuo Satou

Takehiko Naruoka

Norihiko Ikeda

Kazunori Takanashi

Makoto Sugiura

Eiji Yoneda

Takashi Chiba

Tomohiro Utaka

Tooru Kimura

Takanori Nakano

Norihiko Sugie

Takuma Ebata

Norihiro Natsume

Kaori Sakai

Shunsuke Kurita

Kentarou Harada

Kousuke Terayama

Kenji Hoshiko

Saki Harada

Yuko Kiridoshi

Sousuke Oosawa

An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

Fluorine-containing polymer, purification method, and radiation-sensitive resin composition

A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.

Resin composition and method of forming resist pattern

A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.

Resist pattern-forming method

A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. Rrepresents an alkali-labile group. A represents an oxygen atom, &#x2014;NR'&#x2014;, &#x2014;CO&#x2014;O&#x2014;or &#x2014;SO&#x2014;O&#x2014;, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R&#x2032; represents a hydrogen atom or an alkali-labile group, and '#' and '##' each indicate a bonding hand bonded to R.-A-R&#x2003;&#x2003;(x).

Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound

A radiation-sensitive resin composition includes a first polymer, a second polymer and a radiation-sensitive acid generator. The first polymer has a structure unit represented by a following formula (1-1), a structure unit represented by a following formula (1-2), or both thereof, and has a content of fluorine atoms of no less than 5% by mass to a total mass of the first polymer. The second polymer has an acid-dissociable group, and has a content of fluorine atoms of less than 5% by mass to a total mass of the second polymer. 

Radiation-sensitive resin composition, polymer and method for forming a resist pattern

A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. Rrepresents an alkali-labile group. A represents an oxygen atom, &#x2014;NR'&#x2014;, &#x2014;CO&#x2014;O&#x2014;or &#x2014;SO&#x2014;O&#x2014;, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R&#x2032; represents a hydrogen atom or an alkali-labile group, and '#' and '##' each indicate a bonding hand bonded to R. 

A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. Rrepresents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Rrepresents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents &#x2014;COO&#x2014;*, &#x2014;OCO&#x2014;*, &#x2014;O&#x2014;, &#x2014;S&#x2014;, or &#x2014;NH&#x2014;, wherein '*' indicates a site bonded to R. Rrepresents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group. 

Photoresist composition and resist pattern-forming method

A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70&#xb0; or more.

A radiation-sensitive resin composition for forming a resist film includes a polymer including a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). The first structural unit and the second structural unit are included in an identical polymer molecule or different polymer molecules. Rrepresents a hydrogen atom or a methyl group. Q represents a divalent linking group having 1 to 4 carbon atoms. X represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by X are not substituted or substituted. Rrepresents a hydrogen atom or a methyl group. Y represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by Y are not substituted or substituted. 

Radiation-sensitive resin composition and pattern-forming method

A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0&#xb0; C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Composition for forming resist underlayer film and pattern-forming method

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Tokyo, Japan

Hiromitsu Nakashima