Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Other

Hitachi-high-technologies Corporation

Hitachi Ulsi Engineering Corp.

Hiromichi Enami

Osamu Kasahara

Yoshinao Kawasaki

Hideo Aoki

Isamu Asano

Tsuyoshi Tamaru

Masakazu Sagawa

Nobuo Owada

Osamu Tsuchiya

Toru Kaga

Fumio Ootsuka

Kazuyoshi Torii

Mitsuaki Horiuchi

Jun Sugiura

Hidetsugu Ogishi

Makoto Ogasawara

Keisuke Funatsu

Masatoshi Tsuneoka

Takayoshi Kogano

Seiichirou Shirai

Atsushi Wakahara

Hiroyuki Akimori

Sinichi Suzuki

Nobuhiro Otsuka

Yoshihiro Ikeda

Tomotsugu Shimmyo

Tunehiko Tubone

Ken Tsugane

Hideyuki Yamamoto

Kazuo Nojiri

Tatehito Usui

Toshio Masuda

Kazue Takahashi

Mitsuru Suehiro

Hiroshi Kanekiyo

Yutaka Kobayashi

Hiroyuki Uchiyama

Yoshitaka Tadaki

Masayuki Kojima

Hisashi Nakamura

Toshihiro Sekiguchi

Atsuyoshi Koike

Jun Murata

Hiroyuki Miyazawa

Atsushi Ogishima

Hiroko Kaneko

Michimasa Funabashi

Toshio Maeda

Masaki Nagao

Yasuo Kiguchi

Kazuya Kadota

Tadashi Chikahara

Masato Sadaoka

Masanori Katsuyama

Keizo Suzuki

Seiichi Watanabe

Tetsunori Kaji

Yoshifumi Ogawa

Yutaka Kakehi

Kiyomi Yagi

Tokuo Kure

Katsumi Ogiue

Hiroshi Kawakami

Yoichi Tamaki

Satoru Isomura

Akihisa Uchida

Kiyomi Katsuyama

Muneo Furuse

Masaharu Nishiumi

Shinji Nakajima

Kiyoji Ikeda

Akihiko Konno

Toru Koizumi

Yasushi Gotoh

Toru Nakamura

Kaoru Ohgaya

A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

Plasma processing system and apparatus and a sample processing method

A detection technique for detecting foreign material on the surface of a plasma processing apparatus, capable of accurately sucking/extracting and measuring foreign material contained in the measurement object surface is provided. The detection device comprises a gauge head or probe having a gas blow out opening for intermittently blowing a gas of a predetermined pressure to a measurement object surface and a gas suction opening for sucking foreign material discharged by the gas blown out from the gas blow out opening a particle counter having a suction pump for continuously sucking in a predetermined amount of gas from the gas suction opening for counting the number of foreign material particles contained in the gas sucked by the suction pump and a pressure adjustment unit for intermittently supplying gas of a predetermined pressure to the gas blowing out opening.

Device and method for detecting foreign material on the surface of plasma processing apparatus

A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.

A plurality of measuring devices to obtain numerical information necessary for control in process control of plasma utilizing equipment are connected to a first communication link, a plurality controllers to conduct numerical operations according to the numerical information are connected to a second communication link, and a plurality of control devices to receive control numerical information generated by the controllers to conduct necessary control.

Control apparatus for plasma utilizing equipment

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM

Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions. The disclosed process includes forming insulating films over wiring lines including uppermost wiring lines, the uppermost wiring lines having gaps between adjacent uppermost wiring lines. The insulating films include forming a silicon oxide film over the wiring lines and in the gaps between adjacent uppermost wiring lines, and forming a silicon nitride film over the silicon oxide film, the silicon nitride film being formed by plasma chemical vapor deposition. The silicon oxide film is formed to have a thickness of at least one-half of the gap between adjacent uppermost wiring lines, with the silicon nitride film being thicker than the silicon oxide film.

Semiconductor integrated circuit device, process for fabricating the

A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Semiconductor integrated circuit, method of fabricating the same and

Method of forming teos oxide and silicon nitride passivation layer on

Semiconductor integrated circuit device process for fabricating the same

Growing community of inventors

Tachikawa, Japan

Hiromichi Enami