Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Hiromi Isomae

Toshio Ogawa

Osamu Ito

Jun Yamada

Akitsuna Yuhara

Tadamichi Asai

Takao Kobayashi

Yoshishige Endou

Noritaka Kamimura

Jun Sasaki

Katsuo Ebisawa

Shozi Kawakubo

Masaki Kamiakutsu

Michio Otani

The present invention relates to a thick film resistor material which is suitable especially for thick film hybrid IC having conductor, resistor, semiconductor element and the like in which Cu is used as the conductor and furthermore, a thick film resistor composition which can be fired in a reducing atmosphere. The present invention further relates to a thick film hybrid IC using the thick film resistor composition as a resistor and a method for making it.

Thick film resistor composition, hybrid IC using the composition, and

A SAW device having a piezoelectric substrate and interleaved metal electrodes formed on the substrate, in which the formation of the electrodes on the substrate is carried out by sputtering. Further, the metal electrodes may contain an additive of Cu, Ti, Zn, Mg, Fe, Ni, Cr, Ga, Ge, Sn, Pd or Ta. The resulting SAW device is capable of dealing with high frequency electric signals of a larger amplitude, or higher power electric signals, as compared with the conventional SAW device.

SAW device

Growing community of inventors

Nakaminato, Japan

Hiromi Isomae