Tokuyama Corporation

Hiroki Yokoyama

Reo Yamamoto

Yasuko Takeda

A substrate for device bonding is provided, which enables bonding of a device with high bond strength to an Au electrode formed on a substrate such as aluminum nitride by soldering the device at a low temperature using a soft solder metal having a low melting point such as an Au&#x2014;Sn-based solder having an Au content of 10% by weight. The substrate for device bonding comprises a substrate having an Au electrode layer formed on its surface and in which (i) a layer composed of a platinum group element, (ii) a layer composed of at least one transition metal element selected from the group consisting of Ti, V, Cr and Co, (iii) a barrier metal layer composed of at least one metal selected from the group consisting of Ag, Cu and Ni and (iv) a solder layer composed of a solder containing Sn or In as a main component are laminated in this order on the Au electrode layer.

Substrate for device bonding and method for manufacturing same

A substrate for device bonding includes a substrate having an electrode layer and a solder layer formed on the electrode layer, wherein the solder layer is a Pb-free solder layer which comprises (1) a base metal composed of (i) Sn, (ii) Sn and Au, or (iii) In, (2) at least one metal selected from the group consisting of Bi, In (only in the case where the base metal is Sn, or Sn and Au), Zn, Au (only in the case where the base metal is In) and Sb, and (3) at least one metal selected from the group consisting of Ag, Ni, Fe, Al, Cu and Pt, and the solder layer has a thickness of 1 to 15 &#x3bc;m and a surface roughness (Ra) of not more than 0.11 &#x3bc;m.

Growing community of inventors

Shunan, Japan

Hiroki Yokoyama