Air Water Inc.

Hiroki Sukuki

Keisuke Kawamura

Mitsuhisa Narukawa

Sumito Ouchi

A compound semiconductor substrate has a Si (silicon) substrate, a first Al nitride semiconductor layer which is a graded layer formed on the Si substrate and whose Al concentration decreases as the distance from the Si substrate increases along the thickness direction, a GaN (gallium nitride) layer formed on the first Al nitride semiconductor layer and having a lower average Al concentration than the average Al concentration of the first Al nitride semiconductor layer, and a second Al nitride semiconductor layer formed on the GaN layer and having a higher average Al concentration than the average Al concentration of the GaN layer. The threading dislocation density at any position in the thickness direction within the second Al nitride semiconductor layer is lower than the threading dislocation density at any position in the thickness direction within the first Al nitride semiconductor layer.

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Nagano, Japan

Hiroki Sukuki