Senju Metal Industry Co., Ltd.

Hiroki Sudo

Hiroyoshi Kawasaki

Takahiro Roppongi

Daisuke Soma

Hiroshi Okada

Masato Tsuchiya

Shigeki Kondoh

Takahiro Hattori

Daisuke Souma

Takashi Yashima

Hiroshi Takahashi

Takashi Saito

Isamu Sato

Shunsaku Yoshikawa

Takashi Hagiwara

Yuji Kawamata

Satoshi Yokota

Hiroshi Kawanago

Osamu Munekata

Takashi Akagawa

Takahiro Matsufuji

Atsumi Takahashi

Daisuke Maruko

Mai Susa

Provided are a lead-free and antimony-free solder alloy which has a medium-low melting point and ensures solderability even after being held at a high temperature for a long time, a solder ball, a ball grid array, and a solder joint. The lead-free and antimony-free solder alloy has an alloy composition consisting of 12 to 23% by mass of In, and 0.001 to 0.08% by mass of Ge, with the balance being Sn and unavoidable impurities. Preferably, the alloy composition has 16 to 21% by mass of In; the alloy composition has 0.005 to 0.01% by mass of Ge; the alloy composition has 0.005 to 0.009% by mass of Ge; U and Th as the unavoidable impurities are each included in an amount of 5 mass ppb or less; and As and Pb as the unavoidable impurities are each included in an amount of 5 mass ppm or less.

Lead-free and antimony-free solder alloy, solder ball, ball grid array, and solder joint

Provided are a solder, a solder alloy, a solder ball, a solder paste, and a solder joint, which have a low melting point, high hardness in a high-temperature environment, heat cycle resistance, and electromigration resistance. The solder alloy has an alloy composition that includes by mass %, Bi: 30 to 60%, Ag: 0.7 to 2.0%, Cu: more than 0% and 1.00% or less, Ni: 0.01 to 1.00%, Sb: 0.2 to 1.5%, with the balance being Sn.

Solder alloy, solder ball, solder paste, and solder joint

A core material has a core; a solder layermade of a (Sn—Bi)-based solder alloy provided on an outer side of the core; and a Sn layerprovided on an outer side of the solder layer. The core contains metal or a resin. When a concentration ratio of Bi contained in the solder layeris a concentration ratio (%)=a measured value of Bi (% by mass)/a target Bi content (% by mass), or a concentration ratio (%)=an average value of measured values of Bi (% by mass)/a target Bi content (% by mass), the concentration ratio is 91.4% to 106.7%. The thickness of the Sn layeris 0.215% or more and 36% or less of the thickness of the solder layer

Core material, electronic component and method for forming bump electrode

A method includes applying a first flux onto an electrode provided on a substrate and placing a solder material on the electrode, heating the substrate to form a solder bump on the electrode, deforming the solder bump to provide a flat surface or a depressed portion on the solder bump, applying a second flux to the solder bump; placing a core material on the solder bump, the core material including a core portion and a solder layer that covers a surface of the core portion, and heating the substrate to join the core material to the electrode by the solder bump and the solder layer.

Method for forming bump electrode substrate

The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

Solder material, solder paste, and solder joint

The Cu core ball contains a Cu ball and a solder layer for covering a surface of the Cu ball. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 or more to 1.0 ppm by mass or lower, P in an amount of 0 or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% or higher and 99.9995% by mass or lower, and sphericity which is 0.95 or higher. The solder layer includes Ag in an amount of more than 0 to 4.0% by mass or less, Cu in an amount of more than 0 to 3.0% by mass or less, and remainder of Sn.

Cu core ball, solder joint, solder paste and formed solder

The Cu core ball contains a Cu ball and one or more metal layer for covering a surface of the Cu ball, each layer including one or more element selected from Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher and 99.9995% or lower, sphericity which is 0.95 or higher and a diameter of 1 &#x3bc;m or more to 1000 &#x3bc;m or lower.

Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.

Flux composition for solder applications

Growing community of inventors

Tochigi, Japan

Hiroki Sudo