Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Panasonic Intellectual Property Management Co., Ltd.

Hiroki Shiota

Yoshihiro Yamaguchi

Takashi Nishimura

Hideki Takigawa

Tetsuya Ueda

Shinichi Okada

Kei Yamamoto

Seiki Hiramatsu

Hirotaka Muto

Kenji Mimura

Atsuko Fujino

Kenichi Suga

Hiroshi Yoshida

Masaya Inoue

Shinji Nishimura

Akira Hashimoto

Koji Yamada

Shogo Okamoto

Hiroyuki Harada

Kozo Harada

Atsushi Sakaue

Takahiro Inoue

Tatsuro Hino

Hironori Tsuiki

Seiji Oka

Jun Okada

Yukimasa Hayashida

Takao Tsurimoto

Hiromi Ito

Masakazu Tani

Kazuhiro Tada

Kenichi Morokuma

Nobutake Taniguchi

Shiori Uota

Katsushi Nakada

Shinkichi Sawa

Ryuichi Kitora

Yutaka Ikura

Manabu Yoshinori

Fumitaka Tametani

Shoichi Orita

Tetsuo Motomiya

Makoto Tsukiji

Motoki Masaki

Shiro Takada

Tatsuji Ono

Tetsuo Mizoshiri

Kunihiko Tajiri

Nobuo Urakawa

Mao Sawakawa

Shinji Adachi

Atsushi Yamatake

Teppei Asada

Wataru Bitou

Yoshitaka Miyaji

Kazutake Kadowaki

Hiroumi Yamada

Kazuki Sameshima

Hiroki Nishi

A semiconductor device includes a semiconductor module, an insulating resin layer, a frame member, and a heat sink. Insulating resin layer is bonded to semiconductor module and contains a first resin. Frame member is disposed to surround insulating resin layer, and includes a porous material. Heat sink and semiconductor module sandwich insulating resin layer and frame member. Frame member is compressed while being sandwiched between semiconductor module and heat sink. Insulating resin layer is filled in a region surrounded by semiconductor module, heat sink, and frame member. The first resin enters pores of the porous material.

Frame member with a porous material between a semiconductor module and heat sink

A semiconductor device includes: an inner frame that surrounds an outer circumference of a semiconductor chip; and an outer frame that surrounds an outer circumference of the inner frame; wherein the outer frame is configured with an exterior wall that surrounds the outer circumference of the inner frame, and a fibrous reinforcing member that is wound on an outer circumference of the exterior wall. This prevents the broken pieces of a component that constitutes the semiconductor device from being scattered outside the semiconductor device, thereby not only to achieve improvement in the reliability of the entire system, but also to achieve downsizing of the semiconductor device.

Semiconductor device

The semiconductor device includes: a semiconductor module including a plate-shaped semiconductor element, a conductor electrically connected to one surface of the semiconductor element, a heat dissipation plate of which one surface is thermally and electrically connected to another surface of the semiconductor element, a resin member sealing the semiconductor element, the conductor, and the heat dissipation plate, and an insulation heat dissipation member thermally connected to another surface of the heat dissipation plate exposed from the resin member; a heatsink thermally connected to the insulation heat dissipation member; and an electric field inhibiting plate including a plate-shaped thin part covering the one surface of the semiconductor element and opposed thereto so as to be separated therefrom, the thin part being sealed by the resin member, and a connection part extending from the thin part to the heatsink and thermally and electrically connected to the heatsink.

An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.

Insulating substrate inspecting method and inspecting apparatus

A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

Semiconducter device with filler to suppress generation of air bubbles and electric power converter

A radiation plate structure includes a radiation plate, and a solder resist disposed on a main surface of the radiation plate and having at least one opening. The solder resist is made of any of polyimide (PI), polyamide (PA), polypropylene (PP), polyphenylene sulfide (PPS), a resin containing particulate ceramic (e.g., aluminum nitride (AlN), silicon nitride (SiN), or aluminum oxide (AlO)), and a high-melting-point insulator made of, for instance, glass.

Radiation plate structure, semiconductor device, and method for manufacturing radiation plate structure

A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Signal transmission insulative device and power semiconductor module

A side surface at the outside of a plurality of teeth portions of one separated core is faced to a side surface of teeth portions of an adjacent separated core, so as to form a second slot which is straddled between the adjacent separated cores, and a first slot is formed by a plurality of teeth portions of one separated core, and a width size of the first slot is identical to a width size of the second slot, and coil conductor storage space is formed in the first slot via a first insulating component, and coil conductor storage space is formed in the second slot via a second insulating component, and a thickness size of the first insulating component is different from a thickness size of the second insulating component.

Stator of rotary electric machine and rotary electric machine

An insulation inspection device for motors includes an inverter for driving a motor, a partial discharge detecting unit for determining soundness of the motor, and a control circuit for controlling the inverter. The control circuit adjusts a switching interval of a voltage pulse of the inverter so as to be equal to a pulse round-trip propagation time between the inverter and the motor, thereby generating surge voltage higher than driving voltage for the motor, between the motor and ground, and adjusts a switching time for each phase of the inverter, thereby generating surge voltage higher than driving voltage for the motor, between phases, thus performing insulation inspection.

Insulation inspection device for motors and insulation inspection method for motors

A semiconductor device with improved heat radiation and improved insulation performance. The semiconductor device includes a semiconductor element, a lead frame bonded on one surface to the semiconductor element, a first insulating layer disposed on the other surface of the lead frame, and a metal base plate connected to the lead frame with the first insulating layer interposed between them, wherein an outer peripheral portion of the first insulating layer is inside an outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer is covered with a second insulating layer having higher moisture resistance and higher insulation performance than the first insulating layer, the outer peripheral portion including an electric field concentrated point in an outer peripheral portion of the lead frame.

Heat radiation structure for semiconductor device

A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.

Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

Semiconductor device and process for producing same

Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 &#x3bc;m or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 &#x3bc;m or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

Heat conductive sheet and method for producing same, and powder module

A semiconductor device includes an insulator substrate mounted on a base plate, the insulator substrate having an upper electrode, semiconductor chips mounted on the insulator substrate, external terminals for establishing external electrical connections of the semiconductor device, wires for establishing electrical connections among the external terminals, the upper electrode and the semiconductor chips, a case accommodating the insulator substrate, the semiconductor chips, the external terminals and the wires which are sealed by a sealing material filled in the case, a lid for protecting an upper part of the sealing material, and an insulative low electrification covering fitted on each wire, the low electrification covering having a lesser tendency to produce an electric charge buildup than the sealing material.

Stator coil for rotary electric machine

Growing community of inventors

Tokyo, Japan

Hiroki Shiota