Kokusai Electric Corporation

Hiroki Okamiya

Takashi Ozaki

Seiyo Nakashima

Unryu Ogawa

Masanori Okuno

Tomoyuki Yamada

Masakazu Sakata

Toshihiko Yonejima

Kenji Kanayama

Takeshi Kasai

Masayuki Yamada

Kazuo Nakaya

Katsuaki Nogami

A controller that processes a substrate by executing a process recipe for supplying at least a source gas to a process chamber to form a film on the substrate, and a pressure controller that controls the degree of opening of a pressure control valve on the basis of a pressure value detected by a pressure sensor that detects a pressure in a furnace during execution of the recipe and maintains the process chamber to a predetermined pressure. The pressure controller includes a memory that accumulates data acquired from the pressure sensor and pressure control valve, and measures a valve full close time to full close of the pressure control valve during execution of the process recipe and holds the valve full close time in the memory, and the controller acquires the stored valve full close time and confirms whether the acquired valve full close time falls within a threshold range.

Substrate processing apparatus and control system

A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Substrate processing apparatus, exhaust system and method of manufacturing semiconductor device

Growing community of inventors

Toyama, Japan

Hiroki Okamiya