Unisantis Electronics Singapore Pte. Ltd.

Universal Entertainment Corporation

Aruze Gaming America, Inc.

Cubism Inc.

Nichias Corporation

Hitachi Plant Engineering Construction Co., Ltd.

Unisantis Electronics (japan) Ltd.

Tohoku University

Oki Electric Industry Co., Ltd.

Ebara Corporation

Mitsubishi Chemical Corporation

Jfe Steel Corporation

Japan Energy Corporation

Japan Sewage Works Agency

Aruza Gaming America, Inc.

Hiroki Nakamura

Fujio Masuoka

Nozomu Harada

Shintaro Arai

Tomohiko Kudo

Masumi Fujisawa

Navab Singh

Zhixian Chen

Yoichi Kato

Tatsuo Sumino

Kazuo Okada

Yisuo Li

Hiroyoshi Emori

Kenta Kitamura

Hiromoto Yamauchi

Kenji Enokido

Xiang Li

Kazuhiko Noto

Takako Ogasawara

Takehisa Itagaki

Kou Kobayashi

Hiroaki Kashima

Nobuya Tomosue

Tadashi Sakane

Kiyoshi Sato

Kazumasa Yoshizawa

Hiroki Saito

Kenta Sugano

Masahiko Konishi

Isami Abe

Patrick Guo-Qiang Lo

Naomichi Mori

Yusuke Nakagawa

Akiyoshi Suzuki

Norihiko Nakamura

Masahiro Yoshida

Hiroshi Kubo

Junichi Kitagawa

Yukinori Inamura

Naoyuki Inoue

Hidekazu Suzuki

Yoichiro Yamanaka

Kavitha Devi Buddharaju

Nansheng Shen

Xinpeng Wang

Nobuko Hashimoto

Masataka Kasai

Masaaki Shirai

Aashit Ramachandra Kamath

Kazutoshi Isomura

Vladimir Bliznetsov

Takeshi Aoki

Naoya Shirai

King-Jien Chui

Yu Jiang

Takeshi Narita

Masaya Honda

Junya Satoh

Akihiro Nakashima

R Ramana Murthy

Shen Nansheng

Rukmani Devi Sayanthan

Teng Soong Phua

Zheng Tao

Yuki Takeda

Toshio Matsubara

Keita Shimura

Yuji Miyagawa

Toshitaka Suzuki

Yasuji Fukutomi

Yukihiro Kawakami

Junichi Anan

Susumu Sawada

Tsuyoshi Sakai

Tomoyuki Uchimura

Syuzo Koike

Yoshiaki Kikuchi

Shouji Tanaka

Hideko Aoki

Hiroshi Makabe

Min Soo Kim

Minoru Tada

Phillipe Matagne

Syouji Harada

Yukio Kawaguchi

Tamotsu Mizuguchi

Masami Hotta

Toshio Yamadera

Takashi Kimata

Yuuko Fujii

Atsushi Saiki

Yoshihiro Sakaya

Masahiro Kon

Yasutomo Ohtake

Kazuo Nakajima

Takafumi Shirai

Yumeto Tsukada

Fujo Masuoka

A receptacle connectorincludes a ground contactincluding a fitting portionthat has a tubular shape and is to be fitted to a ground contactof a plug connector; a signal contactthat is to be electrically connected to a signal contactof the plug connector; and an insulating housingthat holds the ground contactand the signal contactin an insulated state. The signal contactincludes a central conductor, and a board connection portionthat extends so as to lead out from the central conductorto be connected to a signal terminal portionof the board. The board connection portionis accommodated in a region surrounded by the fitting portion, and at least a part of the board connection portionis exposed to an outside.

Electrical connector fitted to a matching connector and connector device including the electrical connector and the matching connector

Amusement game machine

A semiconductor-device production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film around the fin-shaped semiconductor layer, and a second step of, after the first step, forming a second insulating film around the fin-shaped semiconductor layer, depositing a first polysilicon on the second insulating film to achieve planarization, forming, in a direction perpendicular to a direction of the fin-shaped semiconductor layer, a second resist for forming a first gate line and a first pillar-shaped semiconductor layer and a third resist for forming a first contact line and a second pillar-shaped semiconductor layer, and etching the first polysilicon, the second insulating film, and the fin-shaped semiconductor layer to form the first pillar-shaped semiconductor layer, a first dummy gate formed from the first polysilicon, the second pillar-shaped semiconductor layer, and a second dummy gate formed from the first polysilicon.

Method for producing a semiconductor device having a fin-shaped semiconductor layer

A method for producing an SGT employs a gate-last process that includes forming a fin-shaped semiconductor layer, a pillar-shaped semiconductor layer, a gate electrode, and a gate line by self-alignment. The gate line and the pillar-shaped semiconductor layer are formed in a direction perpendicular to a direction in which the fin-shaped semiconductor layer extends.

Method for producing a semiconductor device

In an SRAM cell circuit, an N+ layerand a P+ layer, which are present between first gate connection W layersandconnecting to gate TiN layersandin plan view, which connect to the bottom portions of Si pillarsand, and which extend in the horizontal direction, connect through a second gate connection W layerto a first gate connection W layer, which connects to the gate TiN layersandand extend in the horizontal direction. The second gate connection W layerhas a bottom portion within the first gate connection W layer, and has an upper surface positioned lower than the upper surfaces of the gate TiN layerstoand the first gate connection W layersto

Pillar-shaped semiconductor device and method for producing the same

An SGT production method includes a first step of forming a fin-shaped semiconductor layer and a first insulating film; a second step of forming a second insulating film, depositing a first polysilicon, planarizing the first polysilicon, forming a third insulating film, forming a second resist, and etching the third insulating film, the first polysilicon, the second insulating film, and the fin-shaped semiconductor layer to form a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask; and a third step of forming a fourth insulating film, depositing a second polysilicon, planarizing the second polysilicon, subjecting the second polysilicon to etch back to expose the first hard mask, depositing a sixth insulating film, etching the sixth insulating film to form a second hard mask on a side wall of the first hard mask, and etching the second polysilicon to form a second dummy gate.

Semiconductor device including surrounding gate transistor having a gate electrode with inclined side surface

Semiconductor device with surrounding gate transistor (SGT)

Shoe

The method for producing a pillar-shaped semiconductor device includes a step of forming a tubular SiOlayer that surrounds side surfaces of a Playerand Nlayersandformed on a Si pillarby epitaxial crystal growth, forming an AlO layeron a periphery of the SiOlayer, forming a tubular contact hole by etching the tubular SiOlayer using the AlO layeras a mask, and filling the contact hole with W layers, andto form tubular W layers, and(including a buffer conductor layer) that have an equal width when viewed in plan and are in contact with side surfaces of the tops of the Playerand the Nlayersand

Method for producing pillar-shaped semiconductor device

An image display apparatus that that can easily separate an image display apparatus from a touch panel. The image display apparatus comprises a liquid crystal panel (image display apparatus main body), a touch panel that has a fine, uneven structure on its surface and faces the liquid crystal panel via a gap, and an adhesive member for securing these, the adhesive member comprising a substrate, a first adhesive layer, and a second adhesive layer, wherein an adhesive strength (W) between the first adhesive layer and the liquid crystal panel is less than an adhesive strength (W) of the first adhesive layer and the substrate, an adhesive strength (W') of the second adhesive layer and the substrate, and an adhesive strength (W) of the second adhesive layer and the touch panel, and wherein a breaking strength (W) of the substrate is greater than W&#x2032; and/or W

Image display apparatus with touch panel

A semiconductor device includes a pillar-shaped semiconductor layer formed on a planar semiconductor layer, a first insulator surrounding the pillar-shaped semiconductor layer, a first gate surrounding the first insulator and made of a metal having a first work function, a second gate surrounding the first insulator and made of a metal having a second work function different from the first work function, a third gate surrounding the first insulator and made of a metal having the first work function, a first metal layer surrounding the first insulator and having a third work function, and a second metal layer surrounding the first insulator and having the third work function. The first gate, the second gate, and the third gate are electrically connected together.

Semiconductor device

A method for producing a semiconductor device includes depositing a first insulating film and a second insulating film on a planar semiconductor layer formed on a substrate; forming a first hole for forming a gate electrode in the second insulating film; filling the first hole with a first metal to form the gate electrode; forming a side wall formed of a third insulating film on an upper surface of the gate electrode and a side surface of the first hole; performing etching through, as a mask, the side wall formed of the third insulating film, to form a second hole in the gate electrode and the first insulating film; forming a gate insulating film on a side surface of the second hole; and epitaxially growing a semiconductor layer, within the second hole, on the planar semiconductor layer to form a first pillar-shaped semiconductor layer.

A semiconductor device includes a third first-conductivity-type semiconductor layer on a semiconductor substrate, and a first pillar-shaped semiconductor layer on the semiconductor substrate. The first pillar-shaped semiconductor layer including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer. A first gate insulating film is around the first body region, and a first gate is around the first gate insulating film. A second gate insulating film is around the second body region and a second gate is around the second gate insulating film. An output terminal is connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer, and a first contact connects the first gate and the second gate.

A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and a first insulating film around the fin-shaped semiconductor layer. A first contact is on the fin-shaped semiconductor layer, where the first contact is metal contact. A first gate insulating film is around the first contact and a fourth contact on the first contact, and a second gate insulating film is around the fourth contact.

Method for producing semiconductor device and semiconductor device

Surround gate transistor and method for producing the same

Growing community of inventors

Tokyo, Japan

Hiroki Nakamura