Sumitomo Eaton Nova Corporation

Sumitomo Heavy Industries, Ltd.

Sumitomo Heavy Industries Ion Technology Co., Ltd.

Sen Corporation

Hiroki Murooka

Mitsuaki Kabasawa

Mitsukuni Tsukihara

Michiro Sugitani

Hiroshi Matsushita

Masaru Tanaka

Yoshitaka Amano

Masashi Kuriyama

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

Ion generator and ion implanter

An electrostatic chuck protection method includes providing an exposed chuck surface with a protective surface for preventing adherence of foreign materials including a substance exhibiting volatility in a vacuum environment, and removing the protective surface in order to perform a process of forming a substrate electrostatically held on the chuck surface with a surface layer including a substance having volatility in a vacuum chamber. The protective surface may be provided when a low vacuum pumping mode of operation is performed in a vacuum environment surrounding the chuck surface.

Impurity-doped layer formation apparatus and electrostatic chuck protection method

An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.

Ion beam processing method and apparatus therefor

In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.

Ion implantation apparatus capable of increasing beam current

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Ehime, Japan

Hiroki Murooka