Tokyo Electron Limited

Hiroki Amemiya

Akihiro Kikuchi

Hiroshi Nagahata

Akihito Toda

A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mmto 2000 W/31415.9 mm.

Plasma processing method, plasma processing apparatus and storage medium

A method for forming micro lenses includes the step of performing an etching treatment to an object to be processed, which includes a lens material layer and a mask layer having lens shapes and formed on the lens material layer, using an etching gas including SFgas and CHFgas, an etching gas including SFgas and CO gas, an etching gas including a gas having therein carbon and fluorine and CO gas, or an etching gas including two or more kinds of gases from a first gas having therein carbon and fluorine and a second gas having therein carbon and fluorine, to etch the lens material layer and the mask layer and transfer the lens shapes of the mask layer to the lens material layer, thereby forming the micro lenses.

Method for forming micro lenses

In a method for forming micro lenses, a lens material layer made of an inorganic material is formed on a substrate, and an intermediate layer made of an organic material is formed on the lens material layer. Then, a mask layer made of an organic material is formed on the intermediate layer, and lens shapes are formed in the mask layer. The lens shapes of the mask layer are transcribed to the intermediate layer by etching the mask layer and the intermediate layer. Thereafter, the lens shapes of the intermediate layer are transcribed to the lens material layer to form micro lenses by etching the intermediate layer and the lens material layer using a processing gas containing SFgas and CHFgas.

Method for forming micro lenses and semiconductor device including the micro lenses

In a method for forming microlenses, an etching process is performed by using a processing gas on an object to be processed provided with a substrate, a lens material layer formed on the substrate and a mask layer of a lens shape formed on the lens material layer to etch the lens material layer and the mask layer, so that the lens shape of the mask layer is transcribed to the lens material layer. The processing gas is a gaseous mixture of a gas containing fluorine atoms but no carbon atoms and a fluorocarbon-based gas having a ratio of the number of carbon atoms to the number of fluorine atoms which is greater than or equal to 0.5, the gaseous mixture having no oxygen gas.

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Nirasaki, Japan

Hiroki Amemiya