Tosoh Corporation

Sagami Chemical Research Center

Sagami Chemical Research Institute

Hirokazu Chiba

Noriaki Oshima

Taishi Furukawa

Toshiki Yamamoto

Ken-ichi Tada

Kazuhisa Kawano

Atsushi Maniwa

Tetsu Yamakawa

Koichiro Inaba

Kohei Iwanaga

Tadahiro Yotsuya

Hiroyuki Oike

Ken-Ichi Tada

Kenichi Tada

The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein Rto R, R, Rand Rto Rrepresents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein Rand Reach independently represent an alkyl group having 1-16 carbon atoms; Rand Reach independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and Rrepresents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Titanium complex, processes for producing the same, titanium-containing thin film, and process for producing the same

This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.

Ruthenium compound, method of producing the same, method of producing ruthenium-containing thin film using the same, and ruthenium-containing thin film

For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

Ruthenium complex mixture, method of producing the same, composition for film formation, ruthenium-containing film, and method of producing the same

Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M(NR)X(L)(2) and an alkali metal alkoxide (3): (wherein Mrepresents niobium atom or tantalum atom, Rrepresents an alkyl group having from 1 to 12 carbon atoms, Rrepresents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and Mrepresents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Imide complex, method for producing the same, metal-containing thin film and method for producing the same

Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, Rand Rrepresent an alkyl group having from 1 to 6 carbon atoms. Rand Reach independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. Rand Reach independently represents an alkyl group having from 1 to 4 carbon atoms.).

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Kanagawa, Japan

Hirokazu Chiba