Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Hoya Corporation

Hirohito Anze

Takashi Kamikubo

Takayuki Abe

Takayuki Ohnishi

Susumu Oogi

Tomohiro Iijima

Yoshiaki Hattori

Mitsuko Shimizu

Toshiyuki Suzuki

Masahiro Hashimoto

Takashi Saito

Toru Tojo

Yasushi Okubo

Noriaki Nakayamada

Shuichi Tamamushi

Hideo Inoue

Hitoshi Higurashi

Kazuto Matsuki

Hitoshi Sunaoshi

Tomoo Motosugi

Satoshi Yamasaki

Eiji Murakami

Satoshi Nakahashi

In one embodiment, a charged particle beam writing method includes writing a first pattern statically in central part of a first substrate having Charge Dissipation Layer (CDL), calculating, based on a position of the written first pattern, a first correction coefficient, writing a second pattern statically applying with the first correction coefficient in central part of a second substrate having no CDL, calculating, based on a position of the written second pattern, a second correction coefficient, writing a third pattern continuously applying with the first correction coefficient in central part of a third substrate having CDL, calculating, based on a position of the written third pattern, a third correction coefficient, writing a fourth pattern statically applying with the first correction coefficient in wide range of a fourth substrate having CDL, and calculating, based on a position of the written fourth pattern, a fourth correction coefficient.

Charged particle beam writing method

In a method for forming a resist film, a first resist film is formed on a light shielding film formed on a substrate, by using a spin coating method. A protective film is formed on the first resist film. The protective film and the first resist film are simultaneously removed at the same region to expose a portion of the light shielding film. A first region in which the second resist film is formed on the light shielding film and a second region in which the second resist film is formed on the first resist film through the protective film, are provided. The protective film and the second resist film are simultaneously removed in the second region to expose the first resist film. A region in which the first resist film, and a region in which the second resist film, is formed, are separately provided on the substrate.

Method for forming resist film and charged particle beam writing method

A manufacturing method of a phase shift mask in an embodiment includes: forming a metal layer on a substrate, the metal layer having a first region and a second region, the first region being configured to emit secondary electrons by irradiation with electrons, the second region being configured to emit secondary electrons higher in density than the first region, by the irradiation with electrons; patterning the metal layer to form a main pattern in the first region and an alignment mark in the second region; forming a resist layer on the patterned metal layer; and aligning the substrate using a secondary electron image of the alignment mark.

Mask manufacturing method, mask substrate, and charged beam drawing method

A charged particle beam writing method includes determining whether a difference between one of the total area of a pattern and the number of shots in a stripe region with respect to one of adjacent stripe regions of the stripe regions and one of the total area and the number of shots with respect to the other of the adjacent stripe regions exceeds a threshold value, re-dividing, when the difference exceeds the threshold value, a stripe region where the total area or the number of shots is larger than that of the other stripe region in the adjacent stripe regions so that the difference of the total area or the number of shots becomes lower than or equal to the threshold value, and writing a pattern in the stripe regions including a re-divided stripe region, in the writing order of arrangement of the stripe regions.

Charged particle beam writing method and charged particle beam writing apparatus

A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

Mask blank and method of manufacturing mask

A pattern forming method includes performing a first resist development during a first time period to a substrate obtained by coating a resist film having a predetermined thickness onto a predetermined film to be etched, measuring the film thickness of the resist film after the first resist development, writing a predetermined pattern corrected in dimension on the basis of an amount of reduction in thickness of the resist film on the resist film by using a charged particle beam, performing a second resist development during a second time period which is longer than the first time period to the substrate after writing the pattern, and etching the predetermined film to be etched by using the resist film after the second resist development as a mask.

Pattern forming method, charged particle beam writing apparatus, and recording medium on which program is recorded

A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.

Pattern writing method

A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.

Charged beam lithography system

A charged beam lithography method comprising the method steps shown in the Figure below.

Charged beam lithography method

A charged particle beam writing method for determining an optimal exposure dose for each position in a pattern to be drawn on a target before actually drawing the pattern by irradiating the target with charged particles and drawing the pattern with the obtained optimal exposure doses, comprising the first step of determining the first approximate optimal exposure dose for each position on said target, the second step of determining the second optimal exposure dose for each position on said target by determining a corrective value di for correcting said first approximate optimal exposure dose obtained by multiplying the error in the exposure dose of the position produced when exposed to said first approximate optimal exposure dose by a regulation coefficient of a value substantially equal to the exposure dose U(x, y) to back scattering charged particles and adding said corrective value to said first approximate optimal exposure dose, said exposure dose being variable as a function of the location (x, y) of the position, the third step of repeating one of (1) the second step for a predetermined number of times, (2) the second step until each of said second approximate optimal exposure doses tends to converge, and (3) the second step until all the errors in said second approximate optimal exposure doses are found within a predetermined value.

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Kamakura, Japan

Hirohito Anze