Canon Kabushiki Kaisha

Hirohisa Oda

Nobumasa Suzuki

Hitoshi Ishihama

Manabu Matsuo

Tomio Nakayama

Junya Takahashi

Kazumichi Kuramochi

Yasushi Takehana

A plasma processing apparatus includes a vacuum chamber that accommodates an object to be processed, and provides a plasma process to the object in a vacuum or reduced pressure environment, a dielectric for transmitting microwaves to the vacuum chamber and for maintaining the vacuum or reduced environment of the vacuum chamber, a plate that has slots for guiding the microwaves to the dielectric, and a temperature control mechanism that has a cooling channel between the plate and the dielectric, and controls temperature of the dielectric.

Plasma processing apparatus and method

A plasma processing apparatus is disclosed which comprises a container which can be evacuated; a gas supply means for supplying a gas to the inside of the container; and a microwave supply means for supplying microwaves to generate a plasma in the container, the plasma being utilized to process an article, wherein the microwave supply means is a microwave applicator which is provided with an annular waveguide having a planar H-plane with a plurality of slots provided apart from each other and a rectangular cross section perpendicular to the traveling direction of microwaves and which supplies microwaves to the inside of the container through a dielectric window of the container from the plurality of slots provided in the planar H-plane, and wherein the gas supply means is provided a gas emission port through which the gas is emitted toward the planar H-plane.

Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method

A method of performing treatment under a reduced pressure for processing a substrate placed in a chamber, includes the steps of providing a heater within the chamber, for heating the substrate, placing the substrate on a susceptor, the substrate being placed above the heater within the chamber, chucking the substrate on the susceptor above the heater, heating the substrate with the heater, and evacuating the interior of the chamber to provide a reduced pressure environment.

Method of and apparatus for processing a substrate under a reduced pressure

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Ibaraki, Japan

Hirohisa Oda