Mitsui Chemicals, Inc.

Nec Corporation

Sanyo Electric Co., Ltd.

Ulvac, Inc.

Rohn Co., Ltd.

Mitsu Chemicals, Inc.

National Institute of Advanced Industrial Science and Technology

Hirofumi Tanaka

Yasuhisa Kayaba

Shoko Ono

Kazuo Kohmura

Koji Inoue

Hiroko Wachi

Tsuneji Suzuki

Shigeru Mio

Kenichi Fujii

Nobutoshi Fujii

Takahiro Nakayama

Toshihiko Kanayama

Ryotaro Yagi

Shinichi Chikaki

Yoshinori Shishida

Takashi Unezaki

Moritsugu Morita

Kazuhito Fujita

Yasushi Satoh

Ken Ito

Task of the present invention is to provide a tackifier solution having high solution stability and also provide, by using such a tackifier solution, a pellicle having only few tackifier residues and exhibiting reduced outgas generation. Present invention is a pellicle comprising a pellicle frame, a pellicle membrane stretched over an end surface of one opening of the pellicle frame, and a tackifier layer provided on an end surface of the other opening of the pellicle frame, wherein the tackifier layer contains a (meth)acrylic tackifier which is a solidified resin composition comprising a polymer (A) and a radical polymerization initiator (B), the polymer (A) having a structural unit derived from a (meth)acrylate and a side chain consisting of a carbon-carbon multiple bond-containing group.

Pellicle

Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing semiconductor processing material, and semiconductor device

Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.

Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element

A composition for forming a metal-containing film, the composition including: a compound (A) which is at least one selected from the group consisting of: a compound (a1) containing a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom, and a compound (a2) which is a compound other than the compound (a1) and which contains a nitrogen atom; and a compound (B) which is at least one selected from the group consisting of: a compound (b1) containing a carboxy group and at least one of a germanium atom, a tin atom, a selenium atom or a zirconium atom, and an ester of the compound (b1).

Composition for forming metal-containing film, method of producing composition for forming metal-containing film, semiconductor device, and method of producing semiconductor device

A substrate intermediary body includes: a substrate having a hole in a thickness direction, and a conductor being disposed in the hole; and an adhesion layer formed on a wall surface of the hole. The adhesion layer contains a reaction product of a polymer (A) having a cationic functional group and having a weight-average molecular weight of from 2,000 to 1,000,000 and a polyvalent carboxylic acid compound (B) having two or more carboxyl groups per molecule or a derivative thereof.

Substrate intermediary body, through-hole via electrode substrate, and through-hole via electrode formation method

A composition for forming a film for semiconductor devices including: a compound (A) including a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and having a weight average molecular weight of from 10,000 to 400,000; a crosslinking agent (B) which includes the three or more &#x2014;C(&#x2550;O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more &#x2014;C(&#x2550;O)OX groups are &#x2014;C(&#x2550;O)OH groups, and which has a weight average molecular weight of from 200 to 600; and water (D), in which the compound (A) is an aliphatic amine.

Semiconductor film composition, method of manufacturing semiconductor film composition, method of manufacturing semiconductor member, method of manufacturing semiconductor processing material, and semiconductor device

Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si&#x2014;O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more &#x2014;C(&#x2550;O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more &#x2014;C(&#x2550;O)OX groups are &#x2014;C(&#x2550;O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

The invention provides a sealing composition including: polymer (A) containing a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000; and a benzotriazole compound; in which the content of the polymer (A) is from 0.05 parts by mass to 0.20 parts by mass with respect to 100 parts by mass of the sealing composition; in which the content of the benzotriazole compound in the sealing composition is from 3 ppm by mass to 200 ppm by mass; and in which the sealing composition has a pH of from 3.0 to 6.5.

Sealing composition and method of manufacturing semiconductor device

A method for manufacturing a filling planarization film, the method including: a first coating step of applying a first coating liquid, containing a polyamine and a first solvent, to a region including a recessed part of a member having the recessed part, to fill the first coating liquid into the recessed part; and a second coating step of applying a second coating liquid, containing an organic substance having two or more carboxyl groups and a second solvent having a boiling point of 200&#xb0; C. or less and an SP value of 30 (MPa)or less, to the region including the recessed part of the member into which the first coating liquid has been filled.

Method for manufacturing filling planarization film and method for manufacturing electronic device

Provided is a method for manufacturing a composite body, the method containing: a composition preparation process of preparing a composition that contains a polymer having a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000, and that has a pH of from 2.0 to 11.0; a composite member preparation process of preparing a composite member that includes a member A and a member B, a surface of the member B having a defined isoelectric point, and that satisfies a relationship: the isoelectric point of a surface of the member B&#x3c; the pH of the composition&#x3c;the isoelectric point of a surface of the member A; and an application process of applying the composition to the surface of the member A and the surface of the member B included in the composite member.

Method for manufacturing composite body and composition

A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200&#xb0; C. to 425&#xb0; C., to remove at least a part of the sealing layer.

Semiconductor device, method for manufacturing the same, and rinsing liquid

In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.

Sealing composition for semiconductor, semiconductor device and method of producing the same, and polymer and method of producing the same

The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25&#xb0; C. of 6 or lower.

Semiconductor device production method and rinse

Disclosed is a composition comprising a hydrolysate of an alkoxysilane compound, a hydrolysate of a siloxane compound represented by Formula (1), a surfactant, and an element having an electronegativity of 2.5 or less. In Formula (1), Rand Rindependently represent a hydrogen atom, a phenyl group, &#x2014;CH, &#x2014;(CH)(CF)CFor &#x2014;CH, Rand Rare not both hydrogen atoms simultaneously, Rand Rindependently represent a single bond that links a silicon atom and an oxygen atom to form a cyclic siloxane structure, or each independently represent a hydrogen atom, a phenyl group, &#x2014;CH, &#x2014;(CH)(CF)CF, or &#x2014;CH, a represents an integer of 1 to 6, b represents an integer of 0 to 4, c represents an integer of 0 to 10, d represents an integer of 2 to 4, and n represents an integer of 3 or greater. 

Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film

Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR)and a compound represented by the formula R(Si)(OR)(in the formulas Rrepresents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rrepresents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, Rand Rmay be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.

Precursor composition for porous thin film, method for preparation of the precursor composition, porous thin film, method for preparation of the porous thin film, and semiconductor device

Growing community of inventors

Tsukuba, Japan

Hirofumi Tanaka