Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Sanyo Semiconductor Manufacturing Co., Ltd.

Hiroaki Tomita

Kazuyuki Sutou

Kazuyuki Suto

In a CSP type semiconductor device, the invention prevents a second wiring from forming a narrowed portion on a lower surface of a step portion at the time of forming the second wiring that is connected to the back surface of a first wiring formed near a side surface portion of a semiconductor die on the front surface and extends onto the back surface of the semiconductor die over the step portion of a window that is formed from the back surface side of the semiconductor die so as to expose the back surface of the first wiring. A glass substrate is bonded on a semiconductor substrate on which a first wiring is formed on the front surface near a dicing line with an adhesive resin being interposed therebetween. The semiconductor substrate is then etched from the back surface to form a window having step portions with inclined sidewalls around the dicing line as a center. A second wiring is then formed so as to be connected to the first wiring exposed in the window and extend onto the back surface of the semiconductor substrate over the step portions of the window except part of the step portions on the dicing line and near the dicing line, which extend perpendicular to the dicing line.

Semiconductor device and method of manufacturing the same

A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.

Semiconductor device and manufacturing method thereof

When a bump electrode is formed on an opening formed in a semiconductor substrate, the invention prevents a void that is caused by gas trapped in the opening. A method of manufacturing a semiconductor device of the invention includes forming a first wiring on a main surface of a semiconductor substrate, forming an opening in the semiconductor substrate from the back surface to the main surface so as to expose the back surface of the first wiring, forming a second wiring connected to the back surface of the first wiring and extending from inside the opening onto the back surface of the semiconductor substrate, forming a solder layer connected to part of the second wiring on the bottom of the opening and extending from inside the opening onto the back surface of the semiconductor substrate, and forming a bump electrode on the opening by reflowing the solder layer.

Growing community of inventors

Ota, Japan

Hiroaki Tomita