Nec Electronics Corporation

Nec Corporation

Kanto Kagaku Kabushiki Kaisha

Sumitomo Chemical Company, Limited

Kanto Chemical Co., Inc.

Hiroaki Tomimori

Hidemitsu Aoki

Tatsuya Usami

Akira Furuya

Norio Okada

Kenichi Yamamoto

Norio Ishikawa

Koichi Ohto

Kaoru Mikagi

Masayuki Takashima

Yumiko Abe

Toshiyuki Iwamoto

Yoshiko Kasama

Tetsuya Tao

Takamasa Tanikuni

Toshiyuki Takewaki

Hiroyuki Kunishima

Masashige Moritoki

Takamasa Itou

Keiji Hirano

Takuo Oowada

Kenichi Nakabeppu

Kousei Ushijima

Nobuo Hironaga

Takashi Shimane

Kazumi Saito

Katsuro Tateyama

Tatsuya Koita

An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.

Method for manufacturing semiconductor device to form a via hole

According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide filmis formed on a silicon substrateby thermal oxidation, and a high dielectric constant insulating filmcomprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layerand high dielectric constant insulating filmare selectively removed in stages by a dry etching through a mask of the resist layer, and subsequently, the residual portion of the high dielectric constant insulating filmand the silicon oxide filmare selectively removed by wet etching through a mask of polycrystalline silicon layer. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

Method of forming a high-k film on a semiconductor device

The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.

Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device

An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

Process for making a semiconductor device having a roughened surface

A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(1)wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group;CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(2)wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

Cleaning solution for semiconductor substrate

In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnectionwith a source gas comprising a nitrogen element being used, a copper nitride layeris formed, and thereafter a silicon nitride filmis formed. Hereat, under the copper nitride layer, a thin copper silicide layeris formed.

Manufacturing method of semiconductor device

According to the present invention, there is provided an anticorrosive treating concentrate usable for an exposed surface of a metal (e.g. copper or a copper alloy), containing an anticorrosive agent and a precipitation inhibitor and having a pH of 4 to 12 when used in the form of an aqueous solution, in which concentrate the anticorrosive agent is a triazole type compound and/or a derivative thereof and is contained in a concentration of 0.05 to 20% by weight and the precipitation inhibitor is a compound having at least one nitrogen atom but no metal atom in the molecule.

Anticorrosive treating concentrate

Semiconductor device having a roughened surface

There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

Washing liquid composition for semiconductor substrate

A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

Post-CMP washing liquid composition

A cleaning solution having an oxidation-reduction potential lower than that of pure water and a pH value of 4 or below is used to remove metal contamination, thereby efficiently removing the metal contamination adhered onto a surface of a substrate without damaging an underlayer.

Cleaning method, method for fabricating semiconductor device and cleaning solution

A stripping composition comprising (a) an anticorrosive agent, (b) a stripping agent and (c) a solvent, wherein the anticorrosive agent (a) is a heterocyclic compound having a nitrogen atom-containing six-membered ring.

Stripping agent composition and method of stripping

The present invention provides a method of treating a surface of a semiconductor substrate, the surface of the semiconductor substrate including at least any one of a copper region, a copper based region and a copper alloy region, the method comprises the steps of: carrying out an anti-corrosion treatment by exposing the surface of the semiconductor substrate to a solution containing an anti-corrosive agent; and forming a copper-diffusion stopper insulating film over the surface of the semiconductor substrate.

Growing community of inventors

Kanagawa, Japan

Hiroaki Tomimori