Tokyo Electron Limited

Tokyo Electron Limi Ted

Hiroaki Ashizawa

Hideo Nakamura

Seishi Murakami

Yasushi Fujii

Yu Nunoshige

Yoshikazu Ideno

Yosuke Serizawa

Akinobu Kakimoto

Tsuyoshi Takahashi

Toshiaki Fujisato

Kazuyoshi Yamazaki

Takashi Kamio

Takaya Shimizu

Masaki Koizumi

Masato Koizumi

Seokhyoung Hong

Taichi Monden

Takaaki Iwai

Misuzu Sato

A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device

A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Semiconductor film forming method using hydrazine-based compound gas

A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

Film forming method and film forming apparatus

There is provided a substrate mounting method of bringing a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

Substrate mounting method and substrate mounting device

A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.

A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.

Ruthenium film formation method and storage medium

A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptorin a chamberto a predetermined temperature. After this, the interior of the chambercontaining no wafers W is cleaned by discharging Clgas as a cleaning gas from a shower headinto the chamber. During this cleaning, the temperature of each of the susceptor, the shower head, and the wall portion of the chamberis independently controlled so that the temperature of the susceptoris not lower than the decomposition start temperature of Clgas and the temperature of the shower headand the wall portion of the chamberis not higher than the decomposition start temperature.

Film formation method, cleaning method and film formation apparatus

A single-substrate-heat-processing method performs a reformation process for a tantalum oxide film on a wafer and a crystallization process for this film in this order. In the reformation process and crystallization process, a heater is set at preset temperatures substantially equal to each other, and a pressure in a process chamber is set at first and second process pressures different from each other. A density of a gas present between a support surface and the wafer is changed by using the pressure in the process chamber as a parameter, and thus a heat transfer rate between the support surface and wafer is changed, thereby setting a wafer temperature at first and second process temperatures different from each other.

Growing community of inventors

Yamanashi, Japan

Hiroaki Ashizawa