Lam Research Corporation

Applied Materials, Inc.

Covidien LP

Himanshu Chokshi

Mark Naoshi Kawaguchi

Dan Zhang

Chih-Hsun Hsu

Gnanamani Amburose

Stephen Whitten

Shih-Chung Kon

Andrew Stratton Bravo

Serge Kosche

Eric J Hilton

Ben Ju

Mahmoud Janbakhsh

Youn Gi Hong

Norman Mertke

Mark Jacobus Van Kerkwyk

Wei Yi Luo

Bharat Patel

WeiWu Zhong

A system for controlling a temperature of a substrate during treatment in a substrate processing system comprises a substrate support including first and second components, first and second heaters, and first and second heat sinks. The first component includes an upper surface at least partially defining a center zone. The second component is arranged radially outside of and below the first component. The second component includes an upper surface at least partially defining a radially-outer zone. The first and second components are spaced apart and define a gap between them. The first and second heaters are configured to heat the first and second components, respectively. The first heat sink has one end in thermal communication with the first component. The second heat sink has one end in thermal communication with the second component.

Temperature-tuned substrate support for substrate processing systems

A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

Substrate processing system including dual ion filter for downstream plasma

A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

RF power compensation to reduce deposition or etch rate changes in response to substrate bulk resistivity variations

A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

A system for controlling a temperature of a substrate during treatment in a substrate processing system includes a substrate support defining a center zone and a radially-outer zone. The substrate is arranged over both the center zone and the radially-outer zone during treatment. A first heater is configured to heat the center zone. A second heater is configured to heat the radially-outer zone. A first heat sink has one end in thermal communication with the center zone. A second heat sink has one end in thermal communication with the radially-outer zone. A temperature difference between the center zone and the radially-outer zone is greater than 10&#xb0; C. during the treatment.

A power supply interface system for a medical device may include a battery compartment and a battery interlocking system. The battery compartment may define at least a first battery area and a second battery area, the first battery area configured to receive a first battery and the second battery area configured to receive a second battery. The battery interlocking system may include a first interlock mechanism including a first locking portion and a first selector. The first locking portion may be configured to move between a locking position and a non-locking position, the locking position substantially preventing removal of the first battery from the first battery area, and the non-locking position not preventing removal of the first battery from the first battery area. The first selector may be configured to move the first locking portion from the locking position to the non-locking position in response to the second battery being received in the second battery area.

Power supply interface system for a breathing assistance system

A method for loading substrates in a processing system is provided. In one embodiment, a method for loading substrates utilizes a substrate loader that generally includes a wall having an exterior side with one or more apertures formed therethrough and a related method of loading a processing system. A door assembly is movably coupled to the wall in each of the apertures and is adapted to temporarily retain the substrate. A first portion of the door assembly substantially closes the aperture when the door assembly is in a first or closed position, and a second portion of the door assembly substantially closes the aperture when the door assembly is in a second or open position. A robot for transferring a substrate in a processing system is also provided.

Method for loading a semiconductor processing system

Generally a method and apparatus for determining a position of an object is provided. In one embodiment, an apparatus includes a locating plate, a window and a camera. The camera is positioned to view the target through the window disposed in the locating plate. The position of an object viewed by the camera through the window by be resolved relative to the position of the locating plate. In other embodiments, the apparatus may be disposed in a processing system such as a chemical mechanical polisher to align components such as robots, load cups and polishing heads.

Calibration tool

A substrate loader for a semiconductor substrate processing system that generally includes a wall having an exterior side with one or more apertures formed therethrough and a related method of loading a processing system. A door assembly is movably coupled to the wall in each of the apertures and is adapted to temporarily retain the substrate. A first portion of the door assembly substantially closes the aperture when the door assembly is in a first or closed position, and a second portion of the door assembly substantially closes the aperture when the door assembly is in a second or open position. A robot for transferring a substrate in a processing system is also provided.

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Fremont, CA, United States of America

Himanshu Chokshi