Tokyo Electron Limited

Hikoichiro Sasaki

Kosei Ueda

Yoshinobu Hayakawa

Taichi Hirano

Yoshimitsu Kon

Satoshi Yamada

Takenobu Ikeda

Fumitoshi Kumagai

Junji Ishibashi

Koki Chino

Shirong Guo

Ken Yoshida

Plasma processing method and plasma processing apparatus

An etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative DC voltage to the substrate support.

Etching method and plasma processing apparatus

A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5&#x3c;K&#x3c;1, a constant reflection wave power PRis generated on a high frequency transmission line of a plasma generation system even during a pulse-on period T. Meanwhile, during a pulse-off period T, a reflection wave power PRdecreases. By adjusting the value of K, a balance between the reflection wave power PRduring the pulse-on period Tand the reflection wave power PRduring the pulse-off period Tcan be controlled.

Plasma processing apparatus

In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CF(x is 3 or less and y is 8 or less), CF, a rare gas and Ois supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.

Plasma etching method and computer-readable storage medium

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Nirasaki, Japan

Hikoichiro Sasaki