Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Joled Inc.

Panasonic Liquid Crystal Display Co., Ltd.

Hikaru Nishitani

Takahiro Kawashima

Mikihiko Nishitani

Yoshinao Taketomi

Masashi Goto

Masumi Izuchi

Hiroshi Tsutsu

Tomohiko Oda

Keizaburo Kuramasu

Hiroshi Satani

Yoshiko Mino

Sei Ootaka

Genshiro Kawachi

Jun Hashimoto

Masatoshi Kitagawa

Makoto Yamamoto

Masaharu Terauchi

Takuji Tsujita

Yukihiro Morita

Yusuke Fukui

Hiroshi Yoshioka

A semiconductor thin-film manufacturing method includes: forming, above a substrate, an amorphous silicon film (precursor film) having a photoluminescence (PL) intensity greater than or equal to 0.65 when photon energy is 1.1 eV in a PL spectrum normalized to have a maximum PL intensity of 1; and annealing the amorphous silicon film to form a crystalline silicon film.

Semiconductor thin-film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin-film substrate

A crystallinity evaluation method of evaluating crystallinity of a semiconductor film formed above a substrate includes following steps. First, a peak waveform of a Raman band in a Raman spectrum of the semiconductor film is obtained using Raman spectrometry. The Raman band corresponds to a phonon mode unique to the semiconductor film. The peak waveform is a wavelength range having a peak of the Raman band. Next, a first waveform is generated by fitting the obtained peak waveform by Gauss function. Then, a peak value of the first waveform is extracted. Then, a second waveform is generated by fitting the obtained peak waveform by Lorenz function based on the extracted peak value. Then, a peak value, a FWHM, and/or a wavelength indicating the peak value regarding the generated second waveform are obtained. Then, crystallinity of the semiconductor film is evaluated based on the obtained information.

Crystallinity evaluation method, crystallinity evaluation device, and computer software thereof

A thin-film semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film above the substrate; forming an amorphous film (amorphous silicon film) above the substrate; forming a crystalline film (crystalline silicon film) including a first crystal and a second crystal, by crystallizing the amorphous film, the first crystal (i) containing subgrains formed with different crystal orientations in a single crystal and (ii) including a subgrain boundary formed by plural crystal planes between the subgrains, the second crystal having an average crystal grain size smaller than an average crystal grain size of the first crystal; thinning the crystalline film; and forming a source electrode and a drain electrode above the substrate.

Thin-film semiconductor device and method of manufacturing the same

A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm, and an average crystal grain size of about 50 nm or more and 300 nm or less.

Thin-film transistor device

A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer () is formed to a film thickness of 1 &#x3bc;m in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer () is provided on a face of a dielectric layer () on a discharge space side. Furthermore, MgO particles () are dispersed on a surface of the surface layer (). The surface layer () has the effects of protecting the dielectric layer () from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles () have a high initial electron emission property.

Plasma display panel and its manufacturing method

A plasma display panel having a dielectric protection layer () including MgO and phosphorlayers (R,G,B) for red, green, and blue respectively wherein none of the phosphor layers contain any member of the group consisting of Group IV elements, transition metals, alkali metals, and alkaline earth metals, or wherein all the phosphor layers each contain a specific amount of one or more members of the group consisting of Group IV group elements, transition metals, alkali metals and alkaline earth metals. In such a plasma display panel, changes over the course of time in the impedance of the dielectric protection layer () is suppressed, and the phosphor layers are uniform with respect to the directional characteristics of the changes of the impedances, which results in suppression of occurrence of black noise.

Plasma display panel

This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistorhaving a polycrystalline semiconductor layer, the semiconductor layerincluding a channel area, highly doped drain areaspositioned on both sides of the channel areaand LDD areaspositioned between the channel areaand the highly doped drain areasand lower in dopant density than the highly doped drain areas, wherein any diameter of the crystalat least partly existing in the LDD areais larger than the size of other crystals

Semiconductor device, liquid crystal display device, EL display device, method for fabricating semiconductor thin film, and method for manufacturing the semiconductor device

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate . In the insulation layer, a lower insulation layer , which is in contact with the transparent insulating substrate , is made to have a higher thermal conductivity than an upper insulation layer . Thereafter, the upper insulation layer is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer . Thus, the amorphous silicon thin film is formed into a polycrystalline silicon thin film

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

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Nara, Japan

Hikaru Nishitani