Asm IP Holding B.v.

HieChul Kim

SungKyu Kang

YoungMin Kim

Sungbae Kim

SeungHwan Lee

HakYong Kwon

KiKang Kim

JongWan Choi

TaeHee Yoo

YoungHoon Kim

JongHyun Ahn

SeongRyeong Kim

KyuMin Kim

KyungEun Lee

A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

Thin film forming method

This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Method for filling a gap in a three-dimensional structure on a semiconductor substrate

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Hwaseong-si, South Korea

HieChul Kim