Aisin Seiki Kabushiki Kaisha

Toyota Jidosha Kabushiki Kaisha

Nichia Corporation

Hideyuki Ohtake

Makoto Yoshida

Hiroaki Tamemoto

Jun Takayanagi

Toshiharu Sugiura

Masayoshi Tonouchi

Atsuo Nabeshima

Naoto Inoue

Yuki Ichikawa

Minoru Yamamoto

Koichiro Tanaka

Masaya Nagai

Yuzuru Uehara

Hideyuki Aikyo

Junpei Yamashita

Tomoya Hirosumi

Yasunari Fujisawa

Yoshitaka Hotta

Kumiko Yamashita

Toshiaki Bessho

Yutaka Kadoya

A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.

Film thickness measuring device and film thickness measuring method

The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.

Coating film inspection apparatus and inspection method

A terahertz wave generation device is provided with an ultra-short pulse laser light source () for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (Fto F) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (). Projection units () of the optical fibers (Fto F) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (), respectively, on terahertz transmission line (A) in the LN crystal () with sequential delays. The optical lengths of the transmission paths of the optical fibers (Fto F) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units ().

Terahertz wave generation device and method for generating terahertz wave

A non-contacting type paint film thickness measuring device includes a generating portion for generating a terahertz pulse light, a detecting portion for detecting the terahertz pulse light, a measured wave form in time-series obtaining portion for obtaining a measured wave form indicating an electric field intensity of a terahertz echo pulse light, and an intrinsic wave form in time-series obtaining portion, having an intrinsic electric field spectrum calculating portion and an intrinsic wave form in time-series calculating portion, for calculating an intrinsic wave form in time-series of an object.

Device and method for measuring thickness of paint film in non-contacting manner

A method of examining a configuration of a sample includes the step of irradiating a terahertz pulsed light, which possesses a wavelength to transmit through the sample, to at least two different portions of the sample, the step of detecting at least two electric field amplitude-time resolved waveforms of the terahertz pulsed light transmitted through the first and second portions of the object to be examined, and the step of examining the configuration of the sample based upon phase information obtained from the electric field amplitude-time resolved waveforms detected.

Method and device for configuration examination

A reflection-type terahertz spectrometer includes an input optical path through which terahertz waves are propagated, an irradiating mechanism that irradiates a sample with terahertz waves propagated through the input optical path, an output optical path through which terahertz waves exiting from the irradiating mechanism are propagated, and a detector that receives and detects the terahertz waves propagated through the output optical path. The irradiating mechanism has at least one planar interface and a refractive index greater than that of a peripheral region contacting the planar interface and is disposed between the input optical path and the output optical path such that the terahertz waves propagated through the input optical path to be incident on the planar interface undergo total internal reflection at the planar interface, and the sample is disposed in the peripheral region contacting the planar interface of the irradiating mechanism. When the terahertz waves undergo the total internal reflection at the planar interface, the sample is irradiated with evanescent waves scattering from the planar interface to the peripheral region contacting the planar interface, so as to measure a spectrum.

Reflection type terahertz spectrometer and spectrometric method

It comprises a voltage-application apparatusfor applying a predetermined voltage to a semiconductor device, and holding it therein; a laser apparatusfor generating a laser beamhaving a predetermined wavelength; an irradiation apparatusfor irradiating the laser beamonto the two-dimensional circuit of the semiconductor device, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatusfor detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means, to which the temporally-changing electric-field signal output from the detection/conversion apparatusis input, for judging the phase of the electric-field signal.

Electric-field distribution measurement method and apparatus for semiconductor device

A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.

Multi-channeled measuring method and apparatus for measuring spectrum of terahertz pulse

A terahertz wave-generating semiconductor crystal includes a zincblende-type III-V compound semiconductor crystal that generates terahertz wave pulses upon application of an ultrashort light pulse in the optical communication band serving as a pump beam.

Semiconductor crystal for generating terahertz waves, terahertz wave-generator incorporating the crystal, semiconductor crystal for detecting terahertz waves, and terahertz waves detector incorporating the crystal

Growing community of inventors

Kariya, Japan

Hideyuki Ohtake