Kabushiki Kaisha Toshiba

Hideya Miyazaki

Koji Hashimoto

Shinichi Ito

Soichi Inoue

Satoshi Tanaka

Kenji Kawano

Hiroyuki Sato

Takayuki Iwamatsu

A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..

Phase shifting mask and method of forming a pattern using the same

Reflection phase shifting mask and method of forming a pattern using the

Phase shifting mask comprising a multilayer structure and method of

Growing community of inventors

Kawasaki, Japan

Hideya Miyazaki