Hitachi-high-technologies Corporation

Hidetoshi Sato

Katsuya Kawakami

Takashi Gunji

Ryoichi Matsuoka

Takumichi Sutani

Ritsuo Fukaya

Zhigang Wang

Hideki Yatabe

Makoto Ezumi

Noriaki Arai

Nobuhiro Okai

Yutaka Hojo

Masahiro Tsunoda

This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle () signal; and a second detection condition for detecting a reflected charged particle () signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation.

Charged particle beam device

A sample conveying mechanism minimizes a risk of damage to a sample typified particularly by a photomask, and the sample conveying mechanism provides the sample retention mechanism for holding the sample so as to be suspended and is configured such that a portion close to a pattern surface of the sample is separated from a projection section of a flange for suspending the sample, thereby inhibiting a contact between the pattern surface and members configuring the conveying mechanism.

Sample conveying mechanism

An object of the present invention is to provide methods and equipment capable of providing highly accurate matching using a template including multiple patterns even when the shapes of some patterns of the template are different from corresponding ones of a SEM image, and when the template and the SEM image have a magnification error. Proposed, as a technique for achieving the object, is a method for performing matching by selectively using some of multiple patterns provided in a predetermined region of design data, and equipment for implementing the method. Moreover, proposed, as another technique for achieving the object, is a method for performing first matching by using multiple patterns provided in a predetermined region of design data and thereafter performing second matching by using some of the multiple patterns provided in the predetermined region, and equipment for implementing the method.

Pattern measurement methods and pattern measurement equipment

There is provided an electron microscope which is capable of making a significant contribution to accomplishment of efficiency in investigating causes for pattern abnormalities found out. The electron microscope including an I/O for capturing image data on a microscopic image acquired by another electron microscope, a computation processing unit for generating a display signal based on the image data on the microscopic image acquired by another electron microscope and captured via the I/O and image data on a microscopic image acquired by the electron microscope itself, in order that the microscopic image acquired by another electron microscope and the microscopic image acquired by the electron microscope itself are displayed at the same scale and under the same display condition, and a display unit for displaying both of the microscopic images based on the display signal from the computation processing unit.

Electron microscope for inspecting dimension and shape of a pattern formed on a wafer

There is provided a mini environment type transfer unit which can efficiently transfer a sample to a critical dimension scanning electron microscope (CD-SEM) even in the case of use of a SMIF pod which can store only one photomask. In addition to a load port, a stocker which can store a plurality of photomasks is provided in the mini environment type transfer unit. A mask storage slot in which a plurality of storage units are stacked is provided in the stocker, and one photomask is stored in each storage unit. A sensor is provided in each storage unit to determine whether or not the photomask is normally stored. Additionally, a sensor is provided in each storage unit to detect whether or not the photomask exists.

Sample transfer unit and sample transferring method

Easily and correctly measuring a dimension of a pattern of a photomask or of an OPC pattern of the photomask. A pattern measurement method of the present invention includes steps of obtaining both a standard pattern corresponding to a predetermined pattern and a measurement point specified in advance; setting a measurement area so that it includes two straight line segments on both sides of the measurement point among outlines of the standard pattern; and measuring a dimension between two contours of the scanned image of the predetermined pattern in the measurement area by superposing the measurement area on the scanned image of the predetermined pattern. The measurement area is set so as not to include portions near corner portions connected to two line segments.

Pattern measurement method and pattern measurement system

A scanning electron microscope is disclosed. The primary electron beam is radiated on a reticle (specimen), and an observation image of the reticle is obtained using the electrons secondarily released. The microscope comprises a lamp for radiating the vacuum ultraviolet light having the wavelength of not more than 172 nm on the reticle in the atmosphere, a radiation chamber for hermetically sealing the reticle so that the vacuum ultraviolet light can be radiated on the reticle, and a specimen holder for holding the reticle in the radiation chamber and capable of adjusting the distance between the lamp and the reticle.

Growing community of inventors

Hitachinaka, Japan

Hidetoshi Sato