Screen Holdings Co., Ltd.

Sokudo Co., Ltd.

Hidetoshi Sagawa

Hiroyuki Ogura

Masahito Kashiyama

Toru Momma

Masanori Imamura

Shogo Yoshida

Shoji Kirita

Junki Nishimura

Masashi Kanaoka

Tsuyoshi Mitsuhashi

Akihiro Hisai

Atsushi Tanaka

Kazuhiro Tadokoro

Kazuya Ono

Shinichi Takada

Masaaki Furukawa

Taiji Matsu

Yoshinori Tawaratani

A treating solution supply apparatus which supplies a treating solution for treating a substrate includes a liquid passage for allowing the treating solution to flow therethrough; and a pump including a chamber with a variable volume for receiving and feeding the treating solution from/to the liquid passage, and a chamber driver electrically driven to vary the volume of the chamber. The liquid passage, chamber, and chamber driver are arranged in the stated order laterally.

Treating solution supply apparatus

A chamber has a first opening, a second opening, and a third opening. The second opening is higher in level than the first and third openings, and is located at the highest position of a reservoir. Air bubbles are easily collected around the second opening, higher in level than the third opening, due to buoyancy. Moreover, the chamber includes an upper slope on an upper inner wall thereof such that a sectional area of the chamber becomes smaller toward the highest position of the reservoir. The upper slope causes the air bubbles not to stagnate but to be guided to the second opening along the upper slope. This makes easy discharge of the air bubbles from the chamber.

Pumping apparatus, treatment solution supplying device, and substrate treating apparatus

A chamber has at least three openings, or a first opening, a second opening, and a third opening formed therein that are in communication with a reservoir. The second opening is higher in level than the first opening. The third opening is used for discharging a liquid within the reservoir by introducing gas through at least one of the first opening and the second opening into the reservoir. Since the third opening is the lowest in level among the three openings, the liquid stored in the reservoir is able to be drained easily.

Pumping apparatus, treatment solution supplying device, substrate treating apparatus, liquid draining method, and liquid replacing method

A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

Substrate treating method

A substrate is held and rotated in a horizontal attitude by a rotation holder. A coating liquid is supplied by a coating liquid supplier to a surface to be processed of the substrate rotated by the rotation holder. A first removal liquid is supplied by a first removal liquid supplier to a first annular region at a peripheral portion of the substrate rotated by the rotation holder before the coating liquid supplied by the coating liquid supplier loses fluidity. In this state, a supply position of the first removal liquid by the first removal liquid supplier is moved from an inner edge to an outer edge of the first annular region.

Substrate processing apparatus and substrate processing method

After a solvent is discharged onto a substrate in a period from a time point tto a time point t, rotation of the substrate is started at a time point t. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t. A rotation speed of the substrate starts to decrease at a time point t, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t. The rotation of the substrate is accelerated in a period from a time point tto a time point t, and the rotation speed of the substrate attains a second speed at the time point t. The rotation of the substrate is decelerated in a period from the time point tto a time point t, and the rotation speed of the substrate attains a third speed at the time point t. Here, deceleration of the rotation of the substrate in the period from the time point tto the time point tis smaller than acceleration of the rotation of the substrate in the period from the time point tto the time point t

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Kyoto, Japan

Hidetoshi Sagawa