Mitsubishi Gas Chemical Company, Inc.

Mitsubishi Gas Chemical, Inc.

Hidetoshi Ikeda

Ryuji Hasemi

Tetsuo Aoyama

Mayumi Hada

Taketo Maruyama

Keiichi Iwata

Ryuji Sotoaka

Yasuhiro Kushida

Hideto Gotoh

Masayuki Kojima

Fukusaburo Ishihara

Kohei Shigeta

Tsuyoshi Matsui

Takafumi Tokunaga

Kazuhisa Usuami

Shinichiro Matsuura

Shunji Sasabe

Yoshimi Torii

Tetsuya Yamamoto

Yoshikazu Ohira

Kazusato Hara

Provided are a method and system for efficiently producing a purified aqueous hydrogen peroxide solution having a high purity. This method for producing a purified aqueous hydrogen peroxide solution comprises: step A for vaporizing a raw material containing a crude aqueous hydrogen peroxide solution; step B for condensing at least a portion of the gas and liquid obtained in step A, and separating the gas and liquid into a gas phase and a liquid phase; and step C for returning, into the raw material, at least a portion of a separation liquid which is the separated liquid phase, wherein step C further includes step D for adjusting the concentration of hydrogen peroxide in the separation liquid.

Method and system for producing purified aqueous hydrogen peroxide solution

There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Cleaning liquid for semiconductor devices

A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.

A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.

Method of producing semiconductor device and rinse for cleaning

A removing agent composition for a photoresist is disclosed which comprises 5 to 50% by weight of an alkanolamine, an alkoxyalkylamine or an alkoxyalkanolamine, 1 to 30% by weight of a glycol monoalkyl ether, 0.5 to 15% by weight of a sugar or a sugaralcohol, 0.01 to 10% by weight of a quaternary ammonium hydroxide, if necessary, and water as the balance; and a method of removing by the use of this composition is also disclosed herein. According to the present invention, there can be provided the removing agent composition for the photoresist which can easily remove, at a low temperature in a short time, a photoresist film applied onto an inorganic substrate in a manufacturing process of semiconductor integrated patterns, a remaining photoresist layer after dry etching or a remaining photoresist residue after ashing and which does not corrode a wiring material at all and which can be rinsed with water alone.

Removing agent composition for photoresist and method of removing

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Niigata, Japan

Hidetoshi Ikeda