Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Az Electronic Materials (luxembourg) S.a.r.l.

Horiba Advanced Techno, Co., Ltd.

Hideto Tateno

Daisuke Hara

Akinori Tanaka

Sadayoshi Horii

Takuya Joda

Masahisa Okuno

Hiroshi Ashihara

Yuichi Wada

Takatomo Yamaguchi

Toru Kakuda

Harunobu Sakuma

Daiki Kimoto

Satoshi Takano

Kimihiko Arimoto

Keishin Yamazaki

Makoto Hirano

Tetsuaki Inada

Iwao Nakamura

Manabu Izumi

Tooru Kakuda

Masamichi Kurokawa

Tomoya Matsui

Takashi Tsukamoto

Takurou Ushida

Described herein is a technique capable of acquiring, monitoring, and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Substrate processing apparatus, processing method, and non-transitory computer-readable recording medium

According to one aspect of the present disclosure, there is provided a technique that includes: a substrate retainer; a reaction tube; a heater configured to heat an inside of the reaction tube; a gas supplier configured to supply a process gas to substrates accommodated in the reaction tube; an exhauster configured to exhaust the process gas from the inside of the reaction tube; a temperature detector configured to measure an inner temperature of the reaction tube; a reflectance detector configured to measure a reflectance of a film formed by supplying the process gas through the gas supplier; and a controller configured to be capable of performing a feedback control of film-forming conditions on the substrates accommodated in the reaction tube by using temperature information measured by the temperature detector and reflectance information measured by the reflectance detector.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Furnace for substrate processing apparatus

A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.

Substrate processing apparatus

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

A technique capable of exhausting a process gas in a wide pressure range includes a substrate processing apparatus including: a process chamber; a gas supply system configured to supply a process gas containing a compound capable of reacting with a metal; and a gas exhaust system configured to exhaust an inner atmosphere of the process chamber, wherein the gas exhaust system includes: a common exhaust piping; a first exhaust piping made of a resin incapable of reacting with the compound and whose one end is connected to the common exhaust piping via a first valve and the other end is connected to a first exhauster; and a second exhaust piping made of the metal and whose one end is connected to the common exhaust piping via a second valve and the other end is connected to a second exhauster.

Exhaust pipe

Gas sampling cell

A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.

Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium

To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.

Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Heat insulating unit for substrate processing apparatus

Growing community of inventors

Toyama, Japan

Hideto Tateno