Shin-etsu Chemical Co., Ltd.

Menicon Co., Ltd.

Shin-estu Chemical Co., Ltd.

Hideto Kato

Michihiro Sugo

Shohei Tagami

Hiroyuki Yasuda

Tomoyoshi Furihata

Satoshi Asai

Kazunori Kondo

Hiroshige Okinoshima

Kyoko Soga

Takanobu Takeda

Yoshinori Hirano

Masahiro Furuya

Toshihiko Fujii

Tomoyuki Goto

Satoshi Okazaki

Takafumi Ueda

Masahito Tanabe

Katsuya Takemura

Hitoshi Maruyama

Kazuhiro Arai

Takato Sakurai

Jun Hatakeyama

Shoji Ichinohe

Yasushi Yamamoto

Toshio Yamazaki

Kazumi Noda

Hiromasa Yamaguchi

Yoichiro Ichioka

Haruyuki Hiratani

Hiroshi Kanbara

Miki Kobayashi

Satoshi Toyoda

Toshio Shiobara

Jae-Hyun Kim

Akira Yamamoto

Akira Yoshida

Hironao Fujiki

Toshio Takago

Kazuhiko Nakada

Tae-hoon Kim

Koichi Yamaguchi

Takayuki Aoki

Yasuyoshi Kuroda

Jung-sik Choi

Yoshinori Yoneda

Kazuhiro Nishikawa

Kenji Araki

Masahiro Yoshizawa

Satoshi Okuse

Jun-won Han

Kumiko Hayashi

Hideyuki Ito

Kazuhiko Nakata

Asai Satoshi

Tomyuki Goto

A photosensitive resin composition comprising an isocyanurate-modified silicone resin containing an epoxy group in the molecule is easy to form a resin coating which has high transparency, light resistance and heat resistance, is amenable to micro-processing, and is useful in applications for protecting and encapsulating optical devices. The coating can be processed in thick film form to define a pattern having a fine size and perpendicularity, and becomes a cured coating which has improved adhesion to substrates, electronic parts, semiconductor devices, and supports for circuit boards, mechanical properties, electric insulation, and crack resistance, and is reliable as an insulating protective film.

Epoxy-containing, isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern forming process

A photosensitive resin composition comprising (A) a silphenylene and polyether structure&#x2014;containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.

Photosensitive resin composition, photosensitive dry film, and pattern forming process

A wafer processing laminate comprising a support, a temporary adhesive material layer laminated on the support, and a wafer stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, the temporary adhesive material layer comprising a first temporary adhesive layer composed of a thermoplastic resin layer (A) laminated on the front surface of the wafer and a second temporary adhesive layer composed of a thermosetting resin layer (B) laminated on the first temporary adhesive layer, the thermoplastic resin layer (A) being soluble in a cleaning liquid (D) after processing the wafer, the thermosetting resin layer (B) being insoluble in the cleaning liquid (D) after heat curing and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (B). This wafer processing laminate allows a wide selection of materials, facilitates separation and collection of a processed wafer, meets requirements on various processes, and can increase productivity of thin wafers.

Wafer processing laminate and method for processing wafer

A novel polymer containing silphenylene and polyether structures in the backbone is used to formulate a photosensitive composition having improved reliability.

Polymer containing silphenylene and polyether structures

To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used. The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.

Laminate and pattern forming method

Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.

Wafer laminate, method for production thereof, and adhesive composition for wafer laminate

To provide a wafer laminate which permits easy bonding between a support and a wafer, permits easy delamination of a wafer from a support, enables enhanced productivity of a thin wafer, and is suited to production of a thin wafer, and for a method of producing the wafer laminate. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer laminated in such a manner that its front surface having a circuit surface faces the adhesive layer. The adhesive layer includes a light-shielding resin layer A and a non-silicone thermoplastic resin-coating resin layer B in this order from the support side. The resin layer A is composed of a resin that contains a repeating unit having a condensed ring, and the resin layer B has a storage elastic modulus E' at 25&#xb0; C. of 1 to 500 MPa and a tensile break strength of 5 to 50 MPa.

Wafer laminate and method of producing the same

A wafer laminate has an adhesive layer () sandwiched between a transparent substrate () and a water (), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer () includes a first cured resin layer () disposed adjacent the substrate and having light-shielding properties and a second cured resin layer () disposed adjacent the wafer and comprising a cured product of a thermosetting resin composition.

Wafer laminate and making method

A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 &#x3bc;m. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.

Film material and pattern forming process

A laminate is provided comprising a support, a resin layer, a metal layer, an insulating layer, and a redistribution layer. The resin layer comprises a photo-decomposable resin having light-shielding properties and has a transmittance of up to 20% with respect to light of wavelength 355 nm. The laminate is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Laminate and making method

A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Semiconductor apparatus, stacked semiconductor apparatus, encapsulated stacked-semiconductor apparatus, and method for manufacturing the same

A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E' of 1-500 MPa at 25&#xb0; C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Semiconductor device, making method, and laminate

A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Semiconductor apparatus, stacked semiconductor apparatus and encapsulated stacked-semiconductor apparatus each having photo-curable resin layer

Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having RSiOunit and SiOunit, (A-3) organohydrogenpolysiloxane having two or more Si&#x2014;H groups per molecule, and (A-4) platinum-based catalyst. There can be provided a wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer using the same which facilitate temporary adhesion and delamination, has excellent CVD resistance, and increasing productivity of thin wafers.

Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer

A wafer processing laminate including support, temporary adhesive material layer laminated on the support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, temporary adhesive material layer including first temporary adhesive layer composed of thermoplastic resin layer (A) laminated on front surface of wafer and second temporary adhesive layer composed of thermosetting resin layer (B) laminated on first temporary adhesive layer, thermoplastic resin layer (A) being soluble in cleaning liquid (D) after processing wafer, thermosetting resin layer (B) being insoluble in cleaning liquid (D) after heat curing and capable of absorbing cleaning liquid (D) such that cleaning liquid (D) permeates into layer (B). This wafer processing laminate allows a wide selection of materials, facilitates separation and collection of processed wafer, meets requirements on various processes, and can increase productivity of thin wafers.

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Annaka, Japan

Hideto Kato