Lintec Corporation

Other

Sony Corporation

Hideo Senoo

Takashi Sugino

Osamu Yamazaki

Takeshi Kondo

Satoru Shoshi

Kazuyoshi Ebe

Yasukazu Nakata

Yuki Hongo

Takasi Sugino

Kazuhiro Takahashi

Takeshi Yamasaki

Masazumi Amagai

Tomomi Yukumoto

Kazuya Katoh

Koichi Nagamoto

Akinori Sato

Yoshihisa Mineura

Katsuhiko Horigome

Yuichi Iwakata

Hitoshi Ohashi

Shunsaku Node

Takaji Sumi

Takeshi c/o Sony Corporation Yamasaki

Tomomi c/o Sony Corporation Yukumoto

A coating composition containing a solvent and a coating agent having an ionizing radiation-curable compound as a principal component thereof, wherein under the following condition for the concentration a (wt %) of the coating agent in the coating composition0&#x3c;a&#x2266;60,the concentration a of the coating agent and the surface tension b (dyne/cm) of the coating composition satisfy the following relationship&#x2266;(&#x2212;/15)+26,is applied onto a surface of a protective filmand curing is carried out to form a hard coating layer. Even in the case that projections or foreign bodies are present on the surface of the protective film, the hard coating layercan conceal these and hence can have high surface smoothness.

Coating composition, coating film, method of manufacturing coating film, and optical recording medium

A sheet to form a protective film for chips includes a release sheet and a protective film forming layer formed on a detachable surface of the release sheet. The protective film forming layer includes a thermosetting and/or energy ray-curable component and a binder polymer component.

Sheet to form a protective film for chips

One side of a substrate filmis coated with a coating composition containing (A) a reactive particle produced by chemically bonding an organic compound having at least one polymerizable unsaturated group in its molecule to an inorganic oxide particle, (B) a monomer or oligomer of an organic compound having at least two polymerizable unsaturated groups in its molecule, (C) an organic compound with a weight average molecular weight of at least 1500 and having at least one polymerizable unsaturated group in its molecule, and, if desired, (D) a siloxane compound having a dimethylsiloxane skeleton, and the coating composition is cured by irradiation with ionizing radiation to form a hard coat layerwith a thickness of 2 to 20 &#x3bc;m. This provides a hard coat film having adequate surface hardness and suppressed warpage.

Coating composition, hard coat film, and optical disk

A semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer. Semiconductor wafer protection structures and methods, and laminated protective sheet for use therein are provided and enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

Semiconductor wafer protection structure and laminated protective sheet for use therein

A process for producing semiconductor chips having a protective film on the back surface includes the steps of: providing a sheet to form the protective film having a release sheet and a protective film-forming layer formed on a detachable surface of the release sheet, wherein the protective film-forming layer includes a thermosetting component, an energy ray-curable component and a binder polymer component; adhering a protective film-forming layer of the sheet to form the protective film onto a back surface of a semiconductor wafer having circuits on its surface; curing the protective film-forming layer by irradiation with an energy ray, and thereafter, further conducting the additional steps of (in any order): detaching the release sheet from the protective film-forming layer; further curing the protective film-forming layer by heating; and dicing the semiconductor wafer together with the protective film-forming layer with respect to each circuit.

Process for producing semiconductor chips having a protective film on the back surface

A process for producing a resin-sealed semiconductor device having high reliability which is produced more easily and efficiently without voids, the process comprising the steps of: (a) providing a semiconductor wafer having circuits on a surface; (b) applying a resin sheet composed of a support and an adhesive resin layer releasable from the support, on the circuit surface of the semiconductor wafer, and fixing an outer periphery of the resin sheet with a ring frame; (c) cutting the semiconductor wafer and the resin layer by each circuit to form chips; (d) picking up each chip together with the resin layer from the support; (e) mounting each chip on a predetermined position of a chip mounting substrate through the resin layer; and (f) firmly bonding the chip on the chip mounting substrate so as to achieve conduction between the chip and the chip mounting substrate.

Process for producing a semiconductor device

An adhesive tape comprising a base and, superimposed thereon, an adhesive layer, this adhesive layer comprising an adherent component (A), an epoxy resin (B), a thermally active latent epoxy resin curing agent (C), an energy radiation polymerizable compound (D) and a photopolymerization initiator (E), wherein either or both of the epoxy resin (B) and energy radiation polymerizable compound (D) have a dicyclopentadiene skeleton in its molecule or molecules thereof. The resultant adhesive tape has an adhesive layer which provides reduced water absorption of an adhesive curing product and which enables a lowering of the elastic modulus thereof during thermocompression bonding.

Adhesive tape

The present invention provides a sheet to form a protective film for chips, which can be readily formed into a highly uniform protective film on a back surface of chip, and which, even if minute scratches are formed on the back surface of chip as a result of mechanical grinding, can eliminate adverse effects resulting from the scratches. The sheet to form a protective film for chips of the present invention comprises a release sheet and a protective film forming layer formed on a detachable surface of the release sheet, wherein said protective film forming layer comprises a thermosetting or energy ray-curable component and a binder polymer component.

Process for producing semiconductor chips

A resin tie barA is formed from a base materialof a heat-resistant resin whose melting point is higher than the temperature during resin molding and an insulative adhesive layeron the base materialand formed from an insulative adhesive agent that may or may not be removable prior to resin molding depending upon its composition. The resin tie barA is applied to the surface of the leadsof a lead frame, and resin molding is then performed, during which the resin tie barA is pressed by a heated moldwhich softens the insulative adhesive agent of the resin tie barA and pushes it into the gapsbetween the leadsof the lead frame. Thus the resin tie barA can be easily formed into a shape that is favorable for the leadsof the lead frame.

Tape for forming resin tie bar, resin tie bar, lead frame equipped with resin tie bar, resin-molded semiconductor device, and method for producing same

Reinforcing material having Rockwell hardness of 60 or above and comprising base material and adhesive is formed, and then the reinforcing material is attached to one side of silicon wafer on which circuits are not formed prior to dicing.

Reinforcement material for silicon wafer and process for producing IC chip using said material

A process for producing a semiconductor device, including the steps of forming grooves of a cut depth smaller than the thickness of a wafer; sticking a surface protective sheet onto the wafer surface; grinding the back of the wafer to divide the wafer into individual chips; adhering a dicing/die bond sheet onto the back of the wafer; peeling the surface protective sheet from the wafer surface to thereby expose the adhesive layer of the dicing/die bond sheet through each space between individual chips; cutting the dicing/die bond sheet; detaching the individual chips from the base of the dicing/die bond sheet; and bonding the individual chips through the adhesive layer of the dicing/die bond sheet to a given substrate.

Process for producing semiconductor device

A process for producing a semiconductor device comprising the steps of providing a wafer having a surface furnished with semiconductor circuits and a back; forming grooves of a depth smaller than the thickness of the wafer, said grooves extending from the wafer circuit surface; sticking a surface protective sheet onto the wafer circuit surface; grinding the back of the wafer so that the thickness of the wafer is reduced, resulting in division of the wafer into individual chips with spaces therebetween; sticking a pressure sensitive adhesive sheet onto the ground back of the wafer, pressure sensitive adhesive sheet comprising a base and, superimposed thereon, an energy radiation curable pressure sensitive adhesive layer; exposing the energy radiation curable pressure sensitive adhesive layer to an energy radiation; and peeling the surface protective sheet from the wafer circuit surface.

A method of securing semiconductor chips comprises the steps of: sticking semiconductor chips at their backs to a transfer tape having an adhesive superimposed thereon at spaced intervals; peeling the semiconductor chips from the transfer tape such that the adhesive is transferred onto the backs of the semiconductor chips; and securing the semiconductor chips by way of the adhesive onto a substrate. The method also includes variations such as sticking the transfer tape to a substrate at predetermined sites for securing semiconductor chips and then peeling the base material of the transfer tape to transfer the adhesive to the predetermined sites on the substrate, followed by securing the semiconductor chips thereto.

Method of using a transfer tape

Dicing tape and a method of dicing a semiconductor wafer

Disclosed is a process for preparing a semiconductor device comprising the steps of adhering a back surface of a wafer, a front surface of which has been formed a circuit, onto the radiation curable adhesive layer, dicing the wafer into chips, rinsing, drying, irradiating the adhesive layer with radiation to cure said adhesive layer, expanding the adhesive sheet if necessary to make the chips apart from each other, then picking up the chips, mounting the picked chips on a lead frame, bonding, and molding to give such a structure that the back surfaces of the chips are partially or wholly in contact with a package molding resin, wherein the radiation curable adhesive layer comprises 100 parts by weight of an acrylic adhesive composed of a copolymer of an acrylic ester and an OH group-containing polymerizable monomer and 50-200 parts by weight of a radiation polymerizable compound having two or more unsaturated bonds, and the radiation curable adhesive layer has an elastic modulus of not less than 1&times;10,dyn/cm,after curing by irradiation with radiation.

Growing community of inventors

Kawaguchi, Japan

Hideo Senoo