Shin-Etsu Chemical Co., Ltd.

Toppan Printing Co., Ltd.

Shin-Estu Chemical Co., Ltd.

Shin-Etsu Chemical C O., Ltd.

Hideo Kaneko

Yukio Inazuki

Hiroki Yoshikawa

Takuro Kosaka

Satoshi Okazaki

Kouhei Sasamoto

Tamotsu Maruyama

Yoshio Tawara

Toyohisa Sakurada

Katsushi Tokunaga

Shinichi Igarashi

Tsuneo Terasawa

Kazuhiro Nishikawa

Noriyasu Fukushima

Satoshi Watanabe

Yoshio Kawai

Ryuji Koitabashi

Takashi Yoshii

Tetsushi Tsukamoto

Takashi Haraguchi

Yosuke Kojima

Akira Ikeda

Tomohito Hirose

Masataka Watanabe

Souichi Fukaya

Yasuaki Nakazato

Yoshiaki Shimizu

Yoshinori Kinase

Shigeo Irie

Tsutomu Shinagawa

Mikio Kojima

Hideki Kobayashi

Hideo Nakagawa

Keiichi Masunaga

Ken Ohashi

Tadao Nomura

Shozo Shirai

Tsuneo Numanami

Masayuki Mogi

Katsuya Okumura

Masayuki Nakatsu

Shohei Mimura

Noboru Tamai

Itsuo Kuroyanagi

Taiga Ogose

Atsushi Tajika

Naoki Kawaura

Shinichi Kohno

Toyofumi Aoki

Yokio Inazuki

Koitabashi Ryuji

With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Reflective mask blank, and method for manufacturing reflective mask

A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film containing tungsten, and another metal, a metalloid or a light element that is formed on the multilayer reflection film and absorbs the exposure light.

Reflective mask blank and reflective mask

A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.

Substrate with multilayer reflection film for EUV mask blank, manufacturing method thereof, and EUV mask blank

A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.

In a photomask blank including a transparent substrate and a first inorganic film containing either or both of a transition metal and silicon, and optional a second inorganic film containing either or both of a transition metal and silicon, when an intensity of secondary ions is measured in the thickness direction of the transparent substrate and the inorganic films by TOF-SIMS with using a primary ion source of Bi and a sputtering ion source of Cs, an intensity of secondary ions containing carbon detected at the interface of the transparent substrate and the inorganic film or the inorganic films is higher than both intensities of the secondary ions containing carbon detected, respectively, at the sides remote from the interface.

Photomask blank, and manufacturing method thereof

A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Substrate defect inspection method and substrate defect inspection apparatus

A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.

Method of manufacturing reflective mask blank, reflective mask blank, and method of manufacturing reflective mask

A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.

Photomask blank and method for preparing photomask

A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.

Photomask blank, photomask blank making method, and photomask making method

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is provided. The halftone phase shift film includes at least one layer composed of a silicon base material having a transition metal content &#x2264;3 at %, a Si+N+O content &#x2265;90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content &#x2264;30 at %, and having a sheet resistance &#x2264;10/&#x3a9;/&#x25a1;. The halftone phase shift film undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and has chemical resistance and improved processability.

Halftone phase shift mask blank and halftone phase shift mask

During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.

Halftone phase shift photomask blank, making method, and halftone phase shift photomask

A photomask blank () having: a transparent substrate (); a first film () etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film () formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si&#x2014;Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.

Photomask blank, method for manufacturing photomask, and mask pattern formation method

In a mask blank comprising a transparent substrate and a single layer or multilayer film formed thereon, the film is formed only on the front surface of the substrate, but not on the side surface, chamfer, front surface-chamfer boundary, and back surface-chamfer boundary. The mask blank contains few particle defects, especially the number of particle defects with a certain size is zero.

Mask blank and making method

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Joetsu, Japan

Hideo Kaneko