Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Hokuriku Seikei Industrial Co., Ltd.

Hideo Eto

Makoto Saito

Ichiro Tono

Kenichi Uchiyama

Ikuo Uematsu

Kayoko Oomiya

Nobuyasu Nishiyama

Masami Hirata

Isao Kishimoto

Miki Nagatomo

Hiroshi Nishimura

Keiji Suzuki

Naotada Okada

Akira Sato

Sachiyo Ito

Michito Miyahara

Yasuhiro Nojiri

Tomohiro Takase

Masahiro Okesaku

Shingo Kasai

Tsutomu Honjoh

Masato Sawada

Hiroshi Sanda

Yukio Okudo

Rikyu Ikariyama

Masanori Sugitani

A bonding apparatus according to the present embodiment includes a first holder and a second holder. The first holder holds a first substrate. The second holder sucks a second substrate, opposes the second substrate to the first substrate, and bonds the second substrate to the first substrate. A first ring stage is provided on an outer circumference of the first holder and allows a first ring member provided on an outer edge of the first substrate to be mounted thereon. A second ring stage is provided on an outer circumference of the second holder and allows a second ring member provided on an outer edge of the second substrate to be mounted thereon. A first heater is provided in the first ring stage. A second heater is provided in the second ring stage.

Bonding apparatus and bonding method

According to one embodiment, a substrate supporting device is a substrate supporting device that supports a substrate in a processing container of a plasma processing apparatus, the substrate supporting device including an electrostatic chuck including a placing plate containing at least a ceramic and having the substrate electrostatically attracted by the placing plate, a lift pin configured to be storable inside the electrostatic chuck and which delivers the substrate to and from the electrostatic chuck, and a cover containing at least a ceramic of a same type as the placing plate and configured to be attachable to and detachable from the lift pin.

Substrate supporting device and plasma processing apparatus

According to one embodiment, a plasma processing-apparatus processing object support platform includes a lower plate, an upper plate, and a variable condenser. The lower plate is electrically conductive. The upper plate is provided on the lower plate. A processing object is placed on an upper surface of the upper plate. The variable condenser is provided along a circumferential direction of the lower plate in a region at an upper outer circumferential vicinity of the lower plate. The region has an annular configuration. The variable condenser includes a first capacitance element and a second capacitance element disposed respectively on an inner circumferential side and an outer circumferential side in the region having the annular configuration. Mutually-different control voltages are suppliable to the first capacitance element and the second capacitance element.

Plasma processing-apparatus processing object support platform, plasma processing apparatus, and plasma processing method

A silicon carbide member for a plasma processing apparatus is obtained by mixing an &#x3b1;-silicon carbide powder having an average particle size of 0.3 to 3 &#x3bc;m, with an amount of metal impurities in the &#x3b1;-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising BC in amount of 0.5 to 5 weight parts or AlOand YOin total amount of 3 to 15 weight parts; sintering a mixture of the &#x3b1;-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.

Silicon carbide member for plasma processing apparatus

According to one embodiment, there is provided a substrate processing apparatus including a processing unit and a manipulator. The processing unit processes a substrate. The manipulator is for maintenance. The manipulator is placed near the processing unit.

Substrate processing apparatus and control method of substrate processing apparatus

According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.

Electrostatic chuck, mount plate support, and manufacturing method of electrostatic chuck

According to one embodiment, a gas supply member is provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member. An yttria-containing film is formed on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member. At least a part of the surface constituting the exhaust port is formed with a curved surface.

Gas supply member, plasma treatment method, and method of forming yttria-containing film

Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity member having a heat conductivity higher than that of a first member formed by using siloxane bond and a low resistance member having a resistivity lower than that of the first member.

Seal member, etching apparatus, and a method of manufacturing a semiconductor device

According to one embodiment, there is provided pressure controlling apparatus including a detecting unit, an exhaust pipe, a regulating valve, and a pressure controlling unit. The regulating valve includes a valve port, a changing unit, and a slide valve. The valve port is communicated with the exhaust pipe. The changing unit changes a shape of the valve port to a different shape whose center is located near the central axis of the exhaust pipe. The slide valve regulates an opening degree of the valve port changed by the changing unit. The pressure controlling unit controls changing of a shape of the valve port by the changing unit and regulation of an opening degree of the valve port by the slide valve.

Pressure controlling apparatus

According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.

Power supply control device, plasma processing device, and plasma processing method

According to one embodiment, a first substrate has a pair of thermosensitive films, a heater film, and a passage protective film having corrosion resistance in a passage forming region on a first main surface, and has a metal sealing film having corrosion resistance in a region other than the passage forming region. A second substrate has a groove formed in the passage forming region on a second main surface and a side wall forming portion separating other regions other than the passage forming region from the groove and protruding beyond the other regions. A fixing member fixes the first substrate to the second substrate. The side wall forming portion of the second substrate is compression bonded so that the side wall forming portion is located on the metal sealing film on the first substrate.

Flow sensor, mass flow controller, and method for manufacturing flow sensor

According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.

Mass flow controller, mass flow controller system, substrate processing device, and gas flow rate adjusting method

An optical biosensor has a total reflection plate so as to totally internally reflect and transmit an incident light, a first grating and a second grating disposed separately on the total reflection plate, and a sensing membrane that is containing an enzyme and a chromogenic reagent and is sandwiched by the first and second gratings on the total reflection plate.

Optical biosensor

The method for measuring the concentration of the measuring object uses a sensor chip comprising an optical waveguide layer and an antibody immobilized layer formed on the surface of the optical waveguide layer, which comprises immobilizing the measuring object and an enzyme-labeled antibody labeled with a labeling enzyme on the antibody immobilized layer of the sensor chip having an immobilized antibody, producing a color-developing and precipitating enzyme reaction product by allowing to react a coloring reagent with the labeling enzyme on the antibody immobilized layer to precipitate the enzyme reaction product on the antibody immobilized layer, allowing to totally reflect a light impinged on the sensor chip from the outside at an interface between the optical waveguide layer and the antibody immobilized layer, and observing to a physical value of the totally reflected light.

Concentration measuring method, concentration measuring kit, and sensor chip for use in the method

An optical waveguide type iontophoresis sensor chip has a substrate having a first hinged plate and a second hinged plate, an optical waveguide plate connected to the first hinged plate and positioned over a first opening delineated in the first hinged plate, and a gel layer fixed on the second hinged plate and covering a second opening delineated in the second hinged plate and configured to contact with the optical waveguide plate through the first opening in case that the substrate is folded.

Growing community of inventors

Mie, Japan

Hideo Eto