Hitachi, Ltd.

Kabushiki Kaisha Toshiba

Ricoh Company, Ltd.

Renesas Technology Corp.

Toshiba Memory Corporation

Hitachi Vlsi Engineering Corp.

Other

Texas Instruments Corporation

Renesas Electronics Corporation

Kioxia Corporation

Toshiba Tec Corporation

Hitachi Ulsi Engineering Corp.

Hideo Aoki

Isamu Asano

Tsuyoshi Tamaru

Takayuki Oshima

Keizo Kawakita

Chiaki Takubo

Yoshitaka Tadaki

Naoko Yamaguchi

Yoshinao Kawasaki

Masakazu Sagawa

Nobuo Owada

Osamu Tsuchiya

Toru Kaga

Fumio Ootsuka

Toshihiro Sekiguchi

Kazuyoshi Torii

Hiromichi Enami

Mitsuaki Horiuchi

Jun Sugiura

Osamu Kasahara

Hidetsugu Ogishi

Makoto Ogasawara

Keisuke Funatsu

Masatoshi Tsuneoka

Satoru Yamada

Yoshitaka Nakamura

Naoki Fukuda

Satoshi Tsukiyama

Nobuyoshi Kobayashi

Jun Murata

Shoji Hotta

Kazumasa Yanagisawa

Eiichi Murakami

Hizuru Yamaguchi

Kazuyuki Tsunokuni

Toshiyuki Kaeriyama

Hiroshi Sakuma

Kan Takeuchi

Hiroshi Iwasaki

Yasuyuki Hotta

Kousuke Okuyama

Kazuo Nojiri

Shinichi Fukada

Fumio Noda

Takashi Yunogami

Takashi Nishikado

Hiromi Takada

Hiroyuki Uchiyama

Goro Katsuyama

Yasuhiro Takahashi

Toshiro Hiraoka

Masayuki Suzuki

Koji Imamiya

Masaaki Kabumoto

Akiyoshi Tanaka

Kanae Amemiya

Toshiaki Yamauchi

Takuya Fukuda

Shigeru Matake

Masatoshi Fukuda

Osamu Miki

Noriko Miura

Daisuke Yokota

Masayoshi Saito

Keiji Okamoto

Yoshiteru Takeshima

Hiroshi Hashizume

Kazuhiko Kajigaya

Yoshiaki Sugizaki

Makoto Yoshida

Tsuyoshi Tanaka

Junji Noguchi

Takahiro Kumauchi

Hiroshi Hosokawa

Ichiro Omura

Yoichiro Kurita

Kenji Takahashi

Hisashi Kaneko

Hiroshi Miyazaki

Mie Matsuo

Kazushige Kawasaki

Hideaki Mochimaru

Hirokazu Ezawa

Atsuko Iida

Masayuki Miura

Kenichi Matsushita

Yoshiaki Goto

Soichi Homma

Tomonao Takamatsu

Taku Nishiyama

Hideo Numata

Yoshiaki Tanaka

Kazutomo Ushijima

Kazunari Ishimaru

Mitsuyoshi Endo

Takafumi Tokunaga

Nobuhiro Makita

Kiyomi Katsuyama

Naoyuki Komuta

Ryoji Matsushima

A semiconductor device according to an embodiment includes a substrate and a semiconductor chip. The semiconductor chip is provided over the substrate. The substrate includes a wire layer and an insulating layer. The wire layer includes a wire electrically connected to the semiconductor chip. The insulating layer is provided in contact with the wire layer and includes a glass woven fabric containing a resin. The glass woven fabric includes a plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven. The glass fibers differ in at least one of the material, number, and thickness depending on the directions parallel with the glass woven fabric.

Semiconductor device and substrate

A semiconductor device according to the present embodiment includes a substrate and a semiconductor chip. The substrate has a first face and a plurality of conductive connection parts provided on the first face. The semiconductor chip has a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts. The conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different in thickness from the conductive connection part arranged in a chip central region of the chip region.

Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device of an embodiment, comprises a step of mounting a first semiconductor element on a board and a step of accommodating a member in which a plate-shaped member and a first adhesive layer are stacked in a collet and pressure-bonding the heated first adhesive layer on the board on which the first semiconductor element is mounted. The collet has a member having the first Young's modulus and a second member having a second Young's modulus which is lower than the first Young's modulus on a surface that accommodates the member in which the plate-shaped member and the first adhesive layer are stacked.

Method for manufacturing semiconductor device

Example implementations described herein are directed to systems and methods for feature preparation that receives patient feature data and determines similarity of pre-stored models with the patient feature data. In an example implementation, a database of the pre-stored models is analyzed to assess similarity indicating that feature preparation of the pre-stored models is compatible with the patient feature data. For similarity indicative of feature preparation to be utilized, the feature preparation is conducted for the patient feature data based on the pre-stored model determined to be similar. The feature preparation retrieves reusable features associate with the similar pre-stored model, where the reusable features comprise pre-calculated features of the model. A machine learning model is generated using results of the feature preparation and patient feature data; and a prediction is provided using the machine learning model.

Feature engineering method, apparatus, and system

A semiconductor device includes a first semiconductor chip, a second semiconductor chip thicker than the first semiconductor chip, a plurality of bumps provided between the first and second semiconductor chips and electrically connecting the first and second semiconductor chips, an adhesive resin provided between the first and second semiconductor chips and bonding the first and second semiconductor chips, and a sealing resin encapsulating the first and second semiconductor chips. At least one of the first and second semiconductor chips has an organic protective film disposed thereon.

Semiconductor device including multiple chips

According to one embodiment, a semiconductor device includes a wiring board, a controller chip that is provided on the wiring board and is sealed with a first resin composition, a nonvolatile memory chip that is provided on the first resin composition and is sealed with a second resin composition, a second bonding wire that connects a pad for electric power supply wiring of the controller chip to the wiring board and is sealed with the first resin composition, and a first bonding wire that connects a pad for signal wiring of the controller chip to the wiring board, is sealed with the first resin composition, and has a higher Pd content than that of the second bonding wire.

Semiconductor device

An electronic apparatus includes first and second packages. The first package includes a first semiconductor chip between opposing first and second surfaces of the first package, a plurality of terminals on the first semiconductor chip facing a first direction that is perpendicular to the first and second surface, the terminals including first input/output terminals and a second input/output terminal, and a plurality of bumps that are electrically connected to the plurality of first input/output terminals at positions that are directly below the first semiconductor chip in the first direction. The second package includes a second semiconductor chip provided on the second surface of the first package, a wire that electrically connects the second semiconductor chip to a conductor that is electrically connected to the second input/output terminal, and coating resin that covers the second surface of the first package, the second semiconductor chip and the wire.

Electronic apparatus

According to one embodiment, a semiconductor device includes a device region covered with a resin film and a dicing region extending along at least one side of the device region, the dicing region including at least a first lithography mark and a second lithography mark. The resin film includes a first dicing region portion which covers a portion of the dicing region between the first lithography mark and the second lithography mark.

Semiconductor device having lithography marks and resin portions in a cutting region

According to one embodiment, a semiconductor device of an embodiment includes a substrate, a metal plate having a main portion having a first width in a first direction and a second width in a second direction orthogonal to the first direction, a first semiconductor chip located between the metal plate and the substrate, the first semiconductor chip having a third width in the first direction and a fourth width in the second direction, and a second semiconductor chip located between the first semiconductor chip and the substrate, wherein the first width is smaller than the third width, and the second width is smaller than the fourth width.

Semiconductor device package having a mounting plate with protrusions exposed from a resin material

An index tree search method, by a computer, for searching an index tree included in a database provided by the computer which includes processors executing a plurality of threads and a memory, the index tree search method comprising: a first step of allocating, by the computer, search ranges in the index tree to the plurality of threads; a second step of receiving, by the computer, a search key; a third step of selecting, by the computer, a thread corresponding to the received search key; and a fourth step of searching, by the computer, the index tree with the selected thread using the received search key.

Index tree search method and computer

A semiconductor device according to an embodiment includes a first memory chip having a first front surface and a first back surface and having a first memory circuit provided on the first front surface side; a second memory chip having a second front surface and a second back surface facing the first front surface, having a second memory circuit provided on the second front surface side, and being electrically connected to the first memory chip; and a logic chip having the first memory chip provided between the logic chip and the second memory chip, having a third front surface and a third back surface, having a logic circuit provided on the third front surface side, and being electrically connected to the first memory chip.

Semiconductor device having stacked logic and memory chips

A computer for executing processing through use of a database, the computer comprising: a processor including a cache memory; and a non-volatile memory coupled to the processor, the non-volatile memory having the database constructed thereon. The computer comprises: a database management module configured to execute processing on the database; and a write processing module configured to write data stored in the cache memory into the database. The write processing module writes data that is operated in the transaction processing into the database among data stored in the cache memory, in a case of receiving a commit request for transaction processing that uses the database.

Computer

A semiconductor device includes a wiring substrate, a first semiconductor element, a second semiconductor element, a bump, a bonding portion, and a resin portion. The second semiconductor element is between the wiring substrate and the first semiconductor element. The bump is between the first and second semiconductor elements and electrically connects the first and second semiconductor elements. The bonding portion is between the first and second semiconductor elements, bonds the first semiconductor element to the second semiconductor element, and has a first elastic modulus. The resin portion has a second elastic modulus higher than the first elastic modulus. The resin portion is between the first and second semiconductor elements. The first semiconductor element is between a second portion of the resin portion and the wiring substrate. A third portion of the resin portion is overlapped with the first and second semiconductor elements.

Semiconductor device and manufacturing method of the same

According to one embodiment, a semiconductor module has a substrate, two nonvolatile memories disposed on a first surface of the substrate, a controller to control the nonvolatile memories, disposed on the first surface of the substrate and between the two nonvolatile memories, and a plurality of terminals that are electrically connected to the two nonvolatile memories and to the controller, disposed on a second surface of the substrate.

Semiconductor module

According to one embodiment, a semiconductor module includes a substrate, which has a first surface and a second surface opposite to the first surface, a controller device and a memory device formed on the first surface, and a metal plate bonded on the second surface. The metal plate is formed at least at a portion of the second surface corresponding to the controller device so that heat generated at the controller device conducts away from the memory device.

Growing community of inventors

Yokohama, Japan

Hideo Aoki