Kabushiki Kaisha Toshiba

Hidemi Kanetaka

Hideki Yamaguchi

Hiroaki Tsunoda

Naoya Hayamizu

Makoto Hasegawa

Masaru Nikaido

Masahisa Sonoda

Eiji Sakagami

Kei Hattori

Takanori Matsumoto

Kenji Matsuzaki

Katsuaki Aoki

Yukihiro Oka

A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.

Surface treatment method, etching method, and method for manufacturing electronic device

A method for manufacturing a semiconductor device includes forming a gate-insulating film on a semiconductor substrate; forming a gate electrode on the gate-insulating film to be electrically insulated from the semiconductor substrate; etching the gate electrode, the gate insulating film and the semiconductor substrate to form a trench which is used to electrically isolate a device region for forming a device from the remainder region on the substrate top surface; and etching the inside of the trench using a gas containing Cland HBr with a different condition from the etching condition of the semiconductor substrate.

Semiconductor device and method of manufacturing the same

An electron device-manufacturing method according to the invention comprises the steps of applying a resin coating layer, containing a solvent, to one of the surfaces of a substrate, directly or with a layer interposed therebetween; drying the resin coating layer to remove the solvent; and heating and pressing the resin coating layer to smooth the surface of the same. The method is characterized in that in the step of smoothing the surface of the resin coating layer, that side of the substrate on which the resin coating layer is not coated is mechanically supported by a supporting member, and a heating roller is brought into contact with the resin coating layer to press and heat the same, with another resin film interposed therebetween, which is thinner than the resin coating layer to be smoothed, thereafter releasing the interposed resin film.

Method of manufacturing electronic device and apparatus for

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Mie-ken, Japan

Hidemi Kanetaka