Tokyo Electron Limited

Ckd Corporation

Hideki Wakai

Takahiro Minatani

Keiichi Nishikawa

Yasuhisa Hirose

Kazutoshi Itoh

Atsushi Kobayashi

Atsuhiko Tabuchi

Fujio Suzuki

A temperature adjustment device includes a pedestal to receive a substrate thereon, a first temperature control unit to set a first medium at a first temperature, and a second temperature control unit to set a second medium at a second temperature that is higher than the first temperature. A pedestal flow passage is provided inside the pedestal to allow the first medium and the second medium to flow therethrough by switching between the first medium and the second medium. A first flow passage through which the first medium flowing from the pedestal flow passage is allowed to flow is provided. A second flow passage through which the second medium flowing from the pedestal flow passage is allowed to flow is provided. A heat pump is connected to the first flow passage and the second flow passage to transfer heat between the first medium and the second medium.

Temperature adjustment device and substrate processing apparatus

A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.

Temperature control system, semiconductor manufacturing device, and temperature control method

A temperature drop is be prevented when a plurality of substrates are processed one after another so as to improve a uniformity of process quality between the substrate. An offset temperature value is obtained which is a difference between a temperature of a processing atmosphere at a time immediately before a first one of the substrates is carried into a reaction container and a temperature of the processing atmosphere at a time the temperature has become constant after the substrate are subjected to a heat treatment process one after another. An electric power is supplied to a heater so as to obtain a time period necessary for raising the temperature of a processing atmosphere to a temperature higher than a setting temperature for the heat treatment process by the offset temperature value. The electric power is supplied to the heater for only the obtained time period when the first one of the substrates is carried into the reaction container, and, thereafter, performing an electric power control of the heater based on a temperature detection value of a temperature detecting part provided outside the reaction container.

Heat treatment apparatus for preventing an initial temperature drop when consecutively processing a plurality of objects

Growing community of inventors

Miyagi, Japan

Hideki Wakai