Tokyo Electron Limited

Hideki Tanaka

Susumu Saito

Masayuki Tomoyasu

Hajime Furuya

Tomoya Okubo

Yoshihiro Yamazaki

Hin Oh

Ryoko Kobayashi

An analysis method for a substrate processing apparatus capable of accurately detecting a state in a housing chamber. Emission intensities of processing gas before being introduced into the chamber and processing gas having passed therethrough are measured before an inter-chamber part is replaced. If an emission intensity measured after the replacement coincides with that measured before the replacement, an emission intensity of the processing gas having passed through the chamber is measured, and a variation between the emission intensities of the processing gas having passed through the chamber measured before and after the replacement is calculated. After start of plasma processing on wafers, an emission intensity of the processing gas having passed through the chamber is measured and the variation is removed therefrom to calculate an emission intensity really representing a state in the chamber, thus detecting an end point of plasma processing therefrom.

Substrate processing apparatus and analysis method therefor

A prediction method for a substrate processing apparatus is to predict processing results from operation data on the substrate processing apparatus during a procedure for processing a target processing substrate in a processing chamber of the substrate processing apparatus. The method includes the steps of: collecting operation data obtained; and obtaining a moving average of a preset number of sets of data using the processing result data collected at the data collection step. The method further includes the steps of: performing multivariate analysis using the operation data collected at the data collection step and the moving average processing result data obtained at the moving average processing step; and predicting processing results using operation data obtained when a target processing substrate, other than the target processing substrate used to obtain the correlation at the analysis step, is processed on a basis of the correlation.

Prediction method and apparatus for substrate processing apparatus

According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatusA and a plasma processing apparatusB by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatusesA andB operate based upon first setting data. Then, when the plasma processing apparatusA operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatusA are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatusA generated based upon the second setting data and to the plasma processing apparatusB, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatusB.

Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus

Analysis data constituted by a plurality of parameters is acquired on the basis of detection values obtained in processes for an object to be processed from a detector arranged in a plasma processing apparatus. With respect to parameters of analysis data decided as abnormal data, as a degree of influence on abnormality, a contribution to, e.g., a residual score is calculated (degree-of-influence calculating step). Contributions of the parameters are set at 0 or a value close to 0 in a descending order of contribution of the parameters to sequentially calculate residual scores, and, when the residual scores are not more than a predetermined value, the parameters having the contributions which are set at 0 or a value close to 0 until now as parameters which cause abnormality (cause-of-abnormality deciding step).

Method and apparatus for deciding cause of abnormality in plasma processing apparatus

In an operation status determination method for a plasma processing apparatus, a principal component analysis is carried out by using operation status data groups. Processing parameter values in the respective operation status data groups are converted into principal component scores which are plotted in a two-dimensional coordinate system with axes of the selected principal components. A movement vector P from a first recipe operation status data group for reference apparatus to a first recipe operation status data group for target apparatus is calculated. An actually measured normal area Ais set, and a predicted normal area Bis set by moving the area Aalong the movement vector P. Then, it is determined whether or not the principal component scores corresponding to the respective processing parameter values when the second recipe is applied to the target apparatus are included in the predicted normal area B

Method and apparatus for determining an operation status of a plasma processing apparatus, program and storage medium storing same

A method of resetting a substrate processing apparatus having a chamber which is capable of carrying out abnormality judgment on the substrate processing apparatus accurately without causing a decrease in the utilization ratio of the substrate processing apparatus. The chamber is evacuated. A temperature in the chamber is set. Whether or not there is an abnormality in the chamber is judged. An atmosphere in the chamber is stabilized so as to conform to predetermined processing conditions. At least one selected from data that change in response to a change in a state inside the chamber is measured. The measured data is compared with reference data that corresponds to the measured data for a normal state in the chamber.

Method of resetting substrate processing apparatus, storage medium storing program for implementing the method, and substrate processing apparatus

In a plasma processing apparatus that forms plasma from a process gas by supplying the process gas into a processing container and applying high-frequency power to an electrode provided inside the processing container on which a workpiece is placed and executes specific plasma processing on the processing surface of the workpiece, apparatus state parameter data indicating a state of the plasma processing apparatus are obtained through measurement executed by a parameter measuring instrument, optical data are obtained through measurement executed by an optical measuring instrument and electrical data are obtained through measurement executed by an electrical measuring instrument. A means for plasma leak judgment judges that a plasma leak has occurred if there is a fluctuation in the data.

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Nirasaki, Japan

Hideki Tanaka