National Institute of Advanced Industrial Science and Technology

Mitsubishi Heavy Industries Limited

Riken Corporation

Toshiba Kikai Kabushiki Kaisha

Ulvac, Inc.

Mitsubishi Heavy Industries Machine Tool Co., Ltd.

Marubun Corporation

Fujitsu Corporation

Sumitomo Chemical Company, Limited

Kabushiki Kaisha Toyota Jidoshokki

The University of Tokyo

Tokyo Ohka Kogyo Co., Ltd.

L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Fujitsu Media Devices Limited

Agency of Industrial Science & Technology, Ministry of International Trade & Industry

Hideki Takagi

Takayuki Goto

Jun Utsumi

Kensuke Ide

Yuuichi Kurashima

Masahiro Funayama

Sung Won Youn

Hideki Hirayama

Takaharu Tashiro

Ryuichiro Kamimura

Yamato Osada

Takafumi Ookawa

Yukio Kashima

Eriko Matsuura

Takashi Matsumae

Takashi Matsuda

Masanori Ueda

Yoshio Satoh

Motoki Kobayashi

Jun Akedo

Shinichi Takagi

Michio Miura

Masahiko Hata

Mitsunori Kokubo

Masafumi Yokoyama

Hisashi Yamada

Takamitsu Kawahara

Kuniaki Yagi

Akiyuki Minami

Mitsuru Takenaka

Satoshi Shimatani

Masato Kinouchi

Hidetsugu Uchida

Toyokazu Sakata

Tetsuji Yasuda

Jean-Marie Friedt

Takenori Suzuki

Hiromi Nishihara

Takeshi Tsuno

Eiichi Ozawa

Naoki Hatta

Hiroshi Hiroshima

Sachie Fujikawa

Hitoshi Umezawa

Ryutaro Maeda

Yuji Urabe

Henri Chevrel

Ko Imaoka

Tomoatsu Makino

Kenta Suzuki

Shinichi Miyazawa

Atsuhiko Maeda

Keiichiro Tsutsumi

Masaharu Takahashi

Taeko Hattori

Taisei Motomura

Sang Cheon Park

Shinya Yanagimachi

Eiji Higurashi

A small plasma source that enables highly efficient discharge in an ultra-high vacuum state includes a first magnet, a second magnet arranged so that a second magnetic pole faces the first magnetic pole of the first magnet, a third magnet having the second magnetic pole directed in the same direction as the first magnetic pole of the first magnet and arranged to surround the first magnet, a fourth magnet having the first magnetic pole different from the second magnetic pole facing the second magnetic pole of the third magnet and arranged to surround the second magnet, a first electrode provided on sides of the first magnetic pole of the first magnet and the second magnetic pole of the third magnet, a second electrode facing the first electrode and provided on sides of the second magnetic pole of the second magnet and the first magnetic pole of the fourth magnet, and a third electrode arranged between the first electrode and the second electrode. A value obtained by dividing a shorter distance between a distance between the first magnet and the second magnet and a distance between the third magnet and the fourth magnet by an average value of thicknesses of the first to fourth magnets is 1 or more and 10 or less.

Plasma source, and atomic clock employing plasma source

A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O—C bonding of at least some C atoms of the (111) surface of the diamond crystal base.

Composite having diamond crystal base

Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.

Method for forming micropattern of polyimide using imprinting

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiOsubstrates) are bonded at room-temperature to have practical bonding strength.

Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

A semiconductor light emitting element with a design wavelength of &#x3bb;, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength &#x3bb; satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength &#x3bb; becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

Semiconductor light emitting element and method for producing the same

A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Manufacturing method for semiconductor substrate

This invention includes a sacrificial thin film formation step for chemical-mechanical polishing a temporary substrate made of a readily polishable material and sputtering a metal thin film along the smoothly polished surface, and a first bonding step for forming a sealing frame obtained by bringing at least a noble metal on the metal thin film and bonding a substrate on the sealing frame. This invention also includes a temporary substrate removal step for then removing the metal thin film along with the temporary substrate and exposing a new surface at the tip of the sealing frame; and a second bonding step for sputtering a noble metal thin film around a precision machine element on the machine substrate, bringing the new surface of the sealing frame into contact onto the noble metal thin film and bonding the new surface of the sealing frame onto the noble metal thin film at room temperature.

Package formation method and MEMS package

A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Room temperature bonding apparatus and room temperature bonding method

A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Light emitting element and method for manufacturing same

A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate

A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Manufcaturing method for room-temperature substrate bonding

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room-temperature bonding method and room-temperature bonding apparatus including sputtering

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room temperature bonding using sputtering

A molding apparatus of a glass material according to the present invention is characterized by containing means for holding a glass material and a molding die in contact with each other, means for heating the glass material and the molding die, and means for applying a voltage across the glass material and the molding die, in which press-molding is performed by electrostatic attraction acting between a surface of the glass material and a surface of the molding die. Further, a molded product of a glass material according to the present invention is characterized by including an alkali metal as a component, in which a concentration of the alkali metal is lowered in vicinity of a surface to be molded as compared with that of a glass base material.

Method of molding glass parts and molding apparatus

A method of manufacturing a surface acoustic device that has a surface acoustic wave filter including comb-like electrodes, electrode pads, and wiring patterns formed on a joined substrate produced by joining a piezoelectric substrate and a supporting substrate to each other. This method includes the steps of: activating at least one of the joining surfaces of the piezoelectric substrate and the supporting substrate; and joining the piezoelectric substrate and the supporting substrate in such a manner that the activated joining surfaces face each other.

Method and manufacturing surface acoustic wave device

Growing community of inventors

Tsukuba, Japan

Hideki Takagi