Kyocera Corporation

Hideki Matsushita

Masanobu Kitada

Tetsuhiro Osaki

A composite substrate comprising a monocrystalline support substrate made of an insulating material and a monocrystalline semiconductor part disposed as a layer on the upper surface of the support substrate. An interface region having a thickness of 5 nm from the bonding interface between the support substrate and the semiconductor part towards the semiconductor part side includes a metal comprising: a metal element excluding the materials constituting the main components of the support substrate and the semiconductor part; and an inert element selected from the group consisting of Ar, Ne, Xe, and Kr. The number of atoms per unit area of the inert element is greater than that of the metal and smaller than that of the element constituting the semiconductor part.

Composite substrate and method for manufacturing same

Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1&#xd7;10/cmor less by adjusting the exposure area of the discharged metal body.

Method of manufacturing a device

A composite substrateaccording to the present invention comprises: a supporting substratethat is formed of an insulating material; a semiconductor partthat is disposed over the supporting substrate; and interfacial inclusionsthat are present at the interface between the supporting substrateand the semiconductor partand contains Ni and Fe so that the ratio of Ni to Fe is 0.4 or more. Consequently, the present invention is able to provide a highly reliable composite substrate wherein the interfacial inclusionsare prevented from diffusing into the semiconductor part

Composite substrate and method for producing same

Provided is a composite substrate which has a high-performance semiconductor layer. A composite substrate of the present invention comprises: a supporting substrate which is formed of an insulating material; a semiconductor layer which is formed of a single crystal semiconductor that is superposed on and joined to the supporting substrate; and interfacial inclusions which are present in the interface between the supporting substrate and the semiconductor layer at a density of 10atoms/cmor less, and which are formed of a metal element that is different from the constituent elements of the supporting substrate and the semiconductor layer.

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Yasu, Japan

Hideki Matsushita