Kobelco Research Institute, Inc.

Kabushiki Kaisha Kobe Seiko Sho

Leo Corporation

L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Genesis Technology Inc.

Hidehisa Hashizume

Yasuhide Nakai

Yutaka Kawata

Masaru Akamatsu

Futoshi Ojima

Hiroyuki Takamatsu

Takuya Kusaka

Shingo Sumie

Jean Friedt

Naoyuki Yoshida

Yuji Hirao

Shunsuke Takami

Michel Morin

Norihisa Harano

Masatake Hirose

Chiyo Fujihira

A measurement unit measures a cross-sectional shape of an edge part of a semiconductor wafer. The measurement unit measures a cross-sectional shape of an edge part of a support member. The measurement unit measures a cross-sectional shape of an edge part of a laminated wafer. An analysis unit calculates a thickness of an adhesive agent by subtracting a thickness of the semiconductor wafer and a thickness of the support member from a thickness of the laminated wafer.

Shape measurement method and shape measurement device

An apparatus and method are provided for measuring the end surface of a disk-shaped semiconductor wafer based on its projection image, without the influence of contaminants on the end surface. A rotation supporting mechanism supports a wafer between a first supporting position rotated by +&#x3b4;relative to a predetermined reference position and a second supporting position rotated by &#x2212;&#x3b4;degrees at two or more supporting positions. An image sensor picks up a projection image of the wafer's end surface. An index value for the end surface is calculated for each of a plurality of obtained projection images. One representative value of the calculated index values or an aggregate value is obtained, and a shape measurement of the wafer's end surface corresponding to the reference supporting position is derived. When the wafer's radius and a chamfer width are set as r and k, &#x3b4;&#x2267;cos((r-k)/r) is satisfied.

Shape measurement apparatus and shape measurement method

A shape measuring device including a light projecting device for projecting a light flux to a measurement portion, and image pickup device for picking up a projection image of the measurement portion. The light projecting device includes a collimator lens having outgoing light of a point light source pass and collimating the same in a light projection direction and one or more apertures shielding passage of light in a range outside an image pickup range or passage of light in a range inside the image pickup range and outside a boundary located in a range outside a projection image of a measurement portion. Moreover, a parallel supporting portion for supporting a face of the measurement target in parallel with the light projection direction at a position on the center side with respect to the measurement portion in the measurement target supported by a center sucking and supporting mechanism is provided.

Shape measuring device

In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

Method of and apparatus for measuring lifetime of carriers in

An apparatus for measuring the life time of minority carriers includes a light source for irradiating a first region of a semiconductor wafer, a microwave generator for generating microwaves, a transmission line for transmitting a first part of the generated mark raised to the region of the semiconductor wafer that is radiated by the excitation light and a second portion of the generated microwave to a region of the semiconductor wafer that is not radiated by the excitation light. The intensity of the microwave signals reflected from the semiconductor wafer are detected and the life time of the minority carriers is calculated based upon the detected intensities.

Apparatus for measuring the life time of minority carriers of a

Method and its device for evaluating semiconductor wafers that evaluates semiconductor wafers by estimating the dopant level which is equivalent to the critical value at which the excess minority carrier injection density reaches the high injection state, and that measures the minority carrier lifetime at a low-injection-state exposure condition adapted to said dopant level. Excitation light (emitted by excitation light generator 4) is emitted onto a semiconductor wafer 2 at varying exposure conditions as imposed by an exposure condition controller 9. Detector 6 detects the change in the level of reflected radiation from microwaves emitted by microwave generator 5 onto the wafer 2. The dopant level in the semiconductor wafer 2 is estimated by estimation circuit 10' based on the change in the exposure conditions and the change in the minority carrier lifetime as determined by the change in the microwave level. The minority carrier lifetime is measured by measurement circuit 12 at the exposure condition adapted to said dopant level as detected by exposure condition detection circuit 11. This structure makes possible the estimation of the dopant level in the semiconductor wafer while obtaining the lifetime based on Shockley-Read-Hall statistics, and is thus highly qualified for evaluating the semiconductor wafer 2.

Method and apparatus for evaluating semiconductor wafers by irradiation

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Kobe, Japan

Hidehisa Hashizume