Hitachi-Kokusai Electric Inc.

Kokusai Electric Co., Ltd.

Hidehiro Yanagawa

Tatsuhisa Matsunaga

Tomoshi Taniyama

Takanobu Nakashima

Kiyohiko Maeda

Masakazu Shimada

Michio Sato

Kazuhiro Morimitsu

Mitsuhiro Hirano

Kouichi Noto

Satoshi Kakizaki

Masaki Matsushima

Ken-ichi Suzaki

Hiroyuki Nishiuchi

Kazumi Nikaido

Masanori Kaneko

Yoshikazu Hisajima

A substrate processing equipment comprises two pod supporting stages and two independently operable pod door openers. Each pod supporting stage is capable of placing thereon a pod for containing substrates therein. Each pod door openers having means for permitting access to the substrates inside the pod placed on a corresponding pod supporting stage.

Dual loading port semiconductor processing equipment

A semiconductor device producing apparatus is disclosed. The apparatus includes a carrier-holding stage for placing a carrier; first, second and third stages each for holding first and second boats one at a time, each boat holding one or more substrates; a boat transfer mechanism for transferring the boats among the first, second and third stages; and a substrate transfer mechanism for transferring the substrate(s) from the carrier to the boat held by the first stage. A controller controls the first stage, the boat transfer mechanism and the substrate transfer mechanism so that the boat transfer mechanism transfers one of the boats from the second stage to the first stage, the substrate transfer mechanism then transfers the substrate(s) from the carrier to the boat held by the first stage, and the first stage then moves the boat into the processing chamber for processing.

Semiconductor device producing apparatus and producing method of semiconductor device

A vertical furnace for use in a semiconductor manufacturing apparatus, which comprises a heater, an outer tube, an inner tube, all being disposed concentrically in a multi-layered fashion, a boat adapted to be introduced into the inner tube with a wafer loaded thereon, and a boat cover disposed internally of the inner tube concentrically therewith. The boat cover is comprised of a boat cover body and an auxiliary cover plate connected to said boat cover body with a given gap therebetween, the boat cover body having a predetermined number of slit apertures extending in a generator direction thereof, the auxiliary cover plate being disposed to cover the slit apertures. The introduced reactive gas flows in branched streams, one flowing through the inside of the boat cover and the other flowing in past the boat cover, whereby the film deposited on the wafer is improved in uniformity and homogeneity. Further, since the boat cover is provided on the inner tube in the form of a unitary body, adjustments relative thereto can be made easily, thus improving the efficiency of the maintenance works thereof.

Vertical furnace of a semiconductor manufacturing apparatus and a boat

A plurality of airtight chambers are connected through blocking means, which can communicate or shut off the chambers, and at least one of the airtight chambers is used as a processing chamber. One of the adjacent airtight chambers is replaced by a replacement gas, and the replacement gas is supplied to the other of the adjacent airtight chambers. When pressure difference or pressure in the two adjacent airtight chambers is below a predetermined value, the adjacent two airtight chambers are communicated, and pressure in the two airtight chambers is equalized.

Method for supplying and discharging gas to and from semiconductor

Growing community of inventors

Tokyo, Japan

Hidehiro Yanagawa