Air Water Inc.

Hidehiko Oku

Ichiro Hide

Kei Mihara

A pellicle intermediary body, a pellicle, a method for manufacturing a pellicle intermediary body, and a pellicle manufacturing method are provided. A pellicle intermediary body has a Si substrate, a Si oxide film formed on a surface of the Si substrate, and a Si layer formed on a surface of the Si oxide film. The Si layer includes a low COP (Crystal Originated Particle) portion which is a part where the number of COPs decreases as it approaches the surface of the Si layer and is formed in the part that constitutes the surface of the Si layer.

Pellicle intermediary body, pellicle, method for manufacturing of pellicle intermediary body, and pellicle manufacturing method

A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

Compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate

A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

Pellicle and method for manufacturing pellicle

A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.

Method for manufacturing of pellicle

A method for manufacturing a substrate with less warpage includes a step of forming SiC filmon a surface of Si substrate, a step of removing bottom surface RGwhich is at least a part of the Si substratecontacting with the SiC film, and a step of forming another SiC film on a surface of SiC filmafter the step of removing the bottom surface RG

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Nagano, Japan

Hidehiko Oku