Mitsubishi Denki Kabushiki Kaisha

Hidehiko Kozawa

Nobuyuki Yoshioka

Junji Miyazaki

Akihiro Nakae

Haruhiko Kusonose

In accordance with a phase shift mask of attenuation type and a manufacturing method thereof, at a prescribed region of a phase shifter portion near and around a light transmitting portion, an auxiliary pattern is provided for controlling an amount of exposure light onto a portion of an exposed material corresponding to this region. Auxiliary pattern enables to cancel light intensity of a side lobe, thereby preventing generation of a region having a high light intensity (a side lobe) at the periphery of the light transmitting portion of the phase shift mask of attenuation type.

Phase shift mask of attenuation type and manufacturing method thereof

A method of monitoring the accuracy with which patterns are written includes the steps of: disposing in an exposure zone a monitor pattern zone for monitoring accuracy; partitioning the monitor pattern zone into a plurality of fields so that the fields overlap each other; forming checking patterns where the plurality of fields overlap each other; and measuring an alignment accuracy in the checking patterns by exposing the plurality of fields to an electron beam and inspecting the exposed field.

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Hyogo, Japan

Hidehiko Kozawa