Tokyo Electron Limited

Hideaki Udou

Kouzou Tachibana

Keisuke Egashira

Kazuki Kosai

Shogo Fukui

Atsushi Anamoto

Seiya Fujimoto

Kotaro Oishi

Takahito Nakashoya

Yudai Takanaga

So Osada

An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.

Substrate processing apparatus and substrate processing method having enhanced configuration of replenishing processing liquid

Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent agent which is heated to a first predetermined temperature and then reaches a second predetermined temperature lower than the first predetermined temperature, is supplied to a substrate. In the rinse step, a rinse liquid is supplied to the substrate after the water-repellency step. In the dry step, the rinse liquid on the substrate after the rinse step is removed.

Substrate processing method and substrate processing apparatus

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Kumamoto, Japan

Hideaki Udou