Other

Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Hitachi Ulsi Engineering Corp.

Hitachi Microcomputer System, Ltd.

Hideaki Tsugane

Hiroyuki Uchiyama

Masayuki Suzuki

Shinji Nishihara

Hiromi Abe

Masashi Sahara

Shinichi Ishida

Yoshiaki Yoshiura

Sonoko Tohda

Hidenori Suzuki

Tatsuyuki Saito

Yasuko Yoshida

Hiroshi Ashihara

Ken Okutani

Uitsu Tanaka

Kazuhiko Kajigaya

Kazunari Suzuki

Seiji Narui

Kiyoshi Nakai

Keizo Kawakita

Takuya Futase

Mitsuo Kimoto

Takashi Hamaya

Fumiyoshi Sato

Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.

Method of manufacturing semiconductor device and sputtering apparatus

Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150&#xb0; C. by using a shower head kept at 180&#xb0; C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400&#xb0; C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.

Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layer

In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.

Semiconductor integrated circuit device with a metallization structure

A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Semiconductor integrated circuit device and method for making the same

Method of manufacturing a multilayer metallization structure with non-directional sputtering method

A pattern of more than one conductive layer overlying a fuse formed in a TEG region is subject to OR processing; further, a combined or &ldquo;synthetic&rdquo; pattern with an opening pattern of one or more testing pads connected to said fuse added thereto is copied by transfer printing techniques to a photosensitive resin layer that is coated on the surface of a semiconductor wafer, thereby forcing the resin layer to reside only in a selected area of a scribe region, to which area the synthetic pattern has been transferred.

Semiconductor integrated circuit device and method for production of the same

A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Method for making semiconductor integrated circuit device having

Growing community of inventors

Fussa, Japan

Hideaki Tsugane