Renesas Electronics Corporation

Fuji Jukogyo Kabushiki Kaisha

Hideaki Tsuchiya

Tatsuya Usami

Hiroshi Kimura

Shinji Yokogawa

Takashi Ide

Keiji Saneyoshi

Yorinobu Kunimune

Yukio Miura

Akira Matsumoto

Takuo Funaya

Koichi Ohto

Yuichi Yoshida

Tomoyuki Nakamura

Toshihiko Akiba

Kenichiro Sonoda

Kenji Sakata

Naohito Suzumura

Keiji Hanawa

Tsutomu Tanzawa

Satoshi Uno

Chikako Ohto

An interlayer dielectric layer covers an electric fuse element. A resistance layer made of silicon metal is arranged on the interlayer dielectric layer and directly above the electric fuse element.

Semiconductor device

A semiconductor device includes a package substrate, a semiconductor chip and a solder bump. The semiconductor chip is disposed on the package substrate. The package substrate includes a first electrode pad, and a first insulating film formed such that the first insulating film exposes a first portion of a surface of the first electrode pad. The semiconductor chip includes a second electrode pad and a second insulating film formed such that the second insulating film exposes a second portion of a surface of the second electrode pad. The second electrode pad is formed on the first electrode pad through the solder bump. L/Lis 0.63 or more in a cross section passing through the first electrode pad, the solder bump and the second electrode pad. A first length of the first portion and a second length of the second portion are defined as Land L, respectively.

Semiconductor device including a package substrate and a semiconductor chip

There is a need to improve reliability of the semiconductor device. A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness hof the pillar electrode is measured from the upper surface of the insulation film. Thickness hof the solder layer is measured from the upper surface of the resist layer. Thickness his greater than or equal to a half of thickness hand is smaller than or equal to thickness h.

To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

A semiconductor device includes an interlayer insulating film INS, adjacent Cu wirings MW formed in the interlayer insulating film INS, and an insulating barrier film BRwhich is in contact with a surface of the interlayer insulating film INSand surfaces of the Cu wirings MW and covers the interlayer insulating film INSand the Cu wirings MW. Between the adjacent Cu wirings MW, the interlayer insulating film INShas a damage layer DMon its surface, and has an electric field relaxation layer ERhaving a higher nitrogen concentration than a nitrogen concentration of the damage layer DMat a position deeper than the damage layer DM

Semiconductor device and manufacturing method of the same

A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 &#x3bc;m.

Semiconductor device and method of manufacturing semiconductor device

The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si&#x2014;N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cmto 860 cm. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.

Semiconductor device and manufacturing method thereof

A wiring layout method includes designing a layout of a power wiring for an integrated circuit; designing a layout of plural signal wirings for the integrated circuit; comparing the signal frequency; classifying the signal wirings; calculating an evaluation value of a temperature rise; and modifying the layouts of the integrated circuit.

Wiring layout decision method of integrated circuit

Conventionally, an excessively strict current limitation is often adopted. An interconnection apparatus includes an acquisition unit and a decision unit. The acquisition unit serves to acquire a current density and data rate of a region that a specific interconnect passes through. The decision unit serves to decide whether the temperature increase corresponding to the current density and the data rate acquired by the acquisition unit is within a permissible range.

Information storage medium on which is stored an interconnection program, interconnection method, interconnection apparatus, and semiconductor device

A recognizing unit recognizes targets located in front of the own vehicle based upon a detection result obtained from a preview sensor, and then, classifies the recognized targets by sorts to which these targets belong. A control unit determines information to be displayed based upon both the targets recognized by the recognizing unit and navigation information. A display device is controlled by the control unit so as to display thereon the determined information. The control unit controls the display device so that symbols indicative of the recognized targets are displayed to be superimposed on the navigation information, and also, controls the display device so that the symbols are displayed by employing a plurality of different display colors corresponding to the sorts to which the respective targets belong.

Information display apparatus and information display method

In a correction operating part three regions including two distant regions and one near region are selected on a reference image picked up by a main camera and distance data are added to the positions of the respective regions to define a range, in which corresponding regions exist, in a comparative image picked up by a sub-camera to search the range to determine the positions of the regions at a resolution of one pixel or less. Then, on the basis of one of the distant regions, a translation correction value and an angle of rotation for the comparative image are derived from the relationship between the positions of the respective regions to be added to the set value of an affine transforming circuit to parallel-displace and rotate the comparative image. Thereafter, an angle of rotation for causing the horizontal line of the main camera to be parallel to the base line of a stereo camera is derived to be added to the set value of an affine transforming circuit to rotate the reference image. Thus, the deviation of the optical axis of the stereo camera is automatically adjusted while carrying out a usual operation for picking up an image of an ordinary landscape to carry out the stereo image processing.

System and method for adjusting stereo camera

A three-dimensional image of a ground surface taken by a stereoscopic camera is converted to a distance image in a stereoscopic processing section. In an altitude calculating section, after peculiar points contained in the distance image are deleted and further the lens distortion is deleted from the distance image, the distance image is transferred to a real space coordinate. Then, an equation approximating to a plane is obtained from data of the distance image and a length of a perpendicular line to the plane is calculated as a ground altitude.

Growing community of inventors

Kanagawa, Japan

Hideaki Tsuchiya