Hitachi, Ltd.

Hideaki Shimamura

Shigeru Kobayashi

Masao Sakata

Tsuneaki Kamei

Yuji Yoneoka

Susumu Tsuzuku

Eisuke Nishitani

Akira Okamoto

Satosi Kisimoto

Masashi Yamamoto

Katsuo Abe

Sunao Matsubara

Tsuneyoshi Kawahito

Hiroyuki Shida

Yukio Tanigaki

Tokio Kato

Yasumichi Suzuki

Takayuki Watanabe

Osamu Kasahara

Susumu Aiuchi

Hidetsugu Ogishi

Daisuke Ito

Hideki Tateishi

Takeshi Oyamada

Shoyo Fujita

A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.

Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus

The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

Vacuum processing device and film forming device and method using same

Vacuum processing equipment, film coating equipment and deposition method

A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.

Sputtering process and an apparatus for carrying out the same

A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles. Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma. The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.

Sputtering apparatus with film forming directivity

A pair of magnets for producing a mirror magnetic field are disposed outside of an electrode structure carrying a target. Microwaves from a microwave source are introduced toward and into a space defined by the mirror magnetic field for generating high-density plasma. While maintaining this high-density plasma over a wide area of the surface of the target, an electric field substantially perpendicular to the surface of the target is applied for sputtering of the target material. The optimized conditions for plasma generation can be selected when the high-density plasma formed outside of a processing chamber is guided to migrate toward an area above the target in the processing chamber. Capability of sputtering of the material from the entire surface of the target increases the rate of film deposition on a substrate and improves the target utilization rate (the quantity of the material deposited on the substrate/the usable area of the target).

Method and apparatus for sputtering

A sputtering target structure suitable for use with a planar magnetron sputtering electrode device has a plurality of annular target members arranged concentrically. The annular target member is provided with either an annular groove for concentration of an electric field or an annular wall for repelling electrons.

Target for sputtering

Growing community of inventors

Yokohama, Japan

Hideaki Shimamura