Hitachi-high-technologies Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Via Mechanics Ltd.

Hitachi High-technologies Corporaiton

Hideaki Sasazawa

Minoru Yoshida

Takenori Hirose

Masahiro Watanabe

Shigeru Serikawa

Toshihiko Nakata

Yasuhiro Yoshitake

Shunichi Matsumoto

Keiya Saito

Tohishiko Nakata

Wataru Nagatomo

Tatsuo Hariyama

Hiroyuki Nakano

Yuta Urano

Hidetoshi Morokuma

Atsushi Miyamoto

Takanori Ninomiya

Ryoichi Matsuoka

Toshiyuki Nakao

Mineo Nomoto

Akiyuki Sugiyama

Takumichi Sutani

Kenji Furusawa

Yukio Matsuyama

Teruaki Tokutomi

Hideo Yamakura

Kaifeng Zhang

Takehiro Tachizaki

Toshio Tamura

Tsuneo Nakagomi

Hisae Yamamura

Minoru Yamasaka

Yu Yanaka

Kiyotaka Horie

Masayoshi Serizawa

Chikara Iwata

Masashi Uehara

Minako Morisato

Takayuki Ishiguro

Masatoshi Yamaga

A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.

X-ray inspection method and device

There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical headhaving a fine repetitive pattern; a &#x3b8; driving unitof scanning an inspected substraterelatively to the near-field optical head; a space holding mechanism of holding a space between the near-field optical headand the inspected substrateconstant; alight sourceof irradiating light to the near-field optical head; a detection systemof detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical headand a fine pattern on a surface of the inspected substrate; and a signal processing unitof inspecting the fine pattern on the inspected substratebased on an output of the detection system

Pattern inspection device of substrate surface and pattern inspection method of the same

In the inspection of a defect in a fine concave-convex pattern, a spectral waveform of a detection area of an inspection object is detected, area determination as to which area section determined by a pattern type of the inspection object the detection area belongs to is performed, a feature calculation equation and a determination index value which correspond to a determined area section and vary according to defect type is selected, feature calculation on the spectral waveform data in accordance with the selected feature calculation equation is performed, and a calculated feature value and the selected determination index value are compared to perform determination processing according to defect type.

Method for defect determination in fine concave-convex pattern and method for defect determination on patterned medium

The present invention provides a method and apparatus for inspecting a surface of a substrate. The apparatus includes: a rotatable stage on which a substrate to be inspected is placed; an inspection optical system having an illumination light source for emitting light to a substrate placed on the stage and a detector for detecting light from the substrate which is irradiated with the light from the illumination light source; an A/D converter for amplifying and A/D converting signals output from the detector in the inspection optical system; and a defect detector for detecting defects in a surface of the substrate by processing signals output from the detector and converted by the A/D converter and classifying the defected defects. The defect detector extracts micro defects in the surface of the substrate by processing the signals output from the detector, and detects linear defects existing discretely in a linear region.

Method and apparatus for inspecting a surface of a substrate

An inspection region is specified using the design information to perform region division for measurement through a scatterometry method. The obtained detection data is classified by pattern into a periodic region and a non-periodic region. A spectroscopic characteristic is detected by an optical sensor to extract features. The extracted features are compared with features stored in a feature map database for each region to evaluate a state of a patterned medium.

Scatterometry method and device for inspecting patterned medium

Applying an alternating current to a magnetic head as a sample generates an alternate-current magnetic field from the sample. A cantilever includes a probe that is made of a magnetic material or is coated with a magnetic material. The cantilever is displaced when it approaches the sample. Detecting the displacement of the cantilever detects distribution of the magnetic field from the sample. It is possible to fast measure distribution of the magnetic field generated from the sample when a frequency of the alternating current applied to the sample differs from a resonance frequency of the cantilever.

Magnetic device inspection apparatus and magnetic device inspection method

In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.

Spectral detection method and device, and defect inspection method and apparatus using the same

This invention relates to a pattern shape inspection method and an apparatus thereof for conducting a first step of irradiating wideband illuminating light which contains far ultraviolet light to a sample from a perpendicular direction, inspecting a shape of the pattern based on a spectral waveform of reflecting light detected from the sample, and detecting an edge roughness of the pattern based on the spectral waveform of the reflecting light detected from the sample, and a second step of irradiating a laser beam to the sample from an oblique direction, and detecting the edge roughness of the pattern based on scattered light detected from the sample.

Pattern shape inspection method and apparatus thereof

The invention has a function of preparing a data base for a relation between a defect shape and an arrangement for the optical system capable of detecting the shape at high sensitivity and automatically adjusting the arrangement for the optical system. As the method of preparing the data base, a method of using optical simulation or an experimental method of using a sample having an optical shape is applied. A pinhole position and a beam size are adjusted automatically so as to attain the optimal arrangement for the optical system to an inputted defect shape based on the data base.

Disk surface inspection apparatus, inspection system thereof, and inspection method thereof

An apparatus for inspecting a pattern shape of a magnetic record medium or its stamper includes: a moving mechanism, on which an object to be inspected where a pattern is formed is placed and which moves the object to be inspected in a radial direction while rotating the object; an irradiating optical system that applies illuminating light of a wide band including far ultraviolet light to the object to be inspected moved in the radial direction while rotating the object by the moving mechanism in a polarized state suitable for the object to be inspected from an oblique direction; a detecting optical system that detects zero-order reflected light generated from the object to be inspected irradiated by the irradiating optical system; and a shape inspection unit that inspects a pattern shape formed on the object to be inspected based on a spectral reflectance waveform obtained by dispersing the detected zero-order reflected light, thereby inspecting the pattern shape at a high speed and with high sensitivity.

Method and apparatus for inspecting a pattern shape

A defect generated during a nano-imprint process is inspected by a scatterometry method. The scatterometry method is to illuminate the surface of a medium with light having a plurality of wave lengths by means of a first illuminator through a half mirror and an objective lens and cause light reflected on the medium to be incident on a spectrometer through the objective lens and the half mirror. A second illuminator illuminates a foreign material or scratch on the surface of the medium from an oblique direction with respect to the surface of the medium. Light is scattered from the foreign material or scratch and detected by first and second detectors. The first detector is placed in a direction defining a first elevation angle with the surface of the medium. The second detector is placed in a direction defining a second elevation angle with the surface of the medium. When coordinates of a defect that are obtained by the scatterometry method match coordinates of the foreign material or scratch, an inspection device determines that the defect is not generated during the nano-imprint process. When the matching is negative, the inspection device determines that the defect is generated during the nano-imprint process.

Method and device for detecting shape of surface of medium

The present invention relates to an apparatus for detecting defects on a disk surface which projects light on the disk surface by a light transmitting system, receives specula reflection light and scattered light by a light receiving system, exposes defects by performing a two-dimensional frequency filter process on a signal, and performs a defect determination process to extract a linear-shaped isolative defect candidate. Next, the present invention performs a periodicity determination process to classify and detect the periodically generated linear and circular arc defects and the isolatively generated linear and circular arc defects.

Method and apparatus for detecting defects on a disk surface

In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.

Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern

The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.

Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method

Making it possible to execute the detection of the particles floating inside a processing chamber with the use of an optical system including one observing window and one unit (An object of the present invention is, by using an optical system including one observing window and one unit, to make it possible to execute the detection of the particles floating inside a processing chamber.) Also, in order to be able to detect exceedingly feeble particle scattered-lights with a high-accuracy, when performing a desired thin-film forming or thin-film processing treatment toward a to-be-processed target inside the processing chamber, the following method is employed: First, the irradiation with a beam is executed into the processing chamber through the observing window. Here, the beam is P-polarized and is intensity-modulated with a frequency differing from an exciting source's frequency and its integer-multiples, and the observing window has an inclination that forms Brewster angle toward the P-polarized incident beam. Next, backward scattered-lights scattered by the particles inside the processing chamber are received and image-photographed at a detecting optical system through the above-described one and the same observing window. Moreover, the above-described frequency component and a wavelength component of the above-described intensity-modulated beam are detected out of the received signals. Finally, the detected components and the image-photographed image information are used so as to judge the number, the size, and the distribution of the particles.

Circuit board production method and its apparatus

Growing community of inventors

Yokohama, Japan

Hideaki Sasazawa