Dainippon Screen Mfg. Co., Ltd.

Dainippon Screen Manufacturing Co., Ltd.

Hideaki Matsubara

Sadao Hirae

Yasuhiro Mizohata

Motohiro Kouno

Masahiro Miyagi

Takamasa Sakai

Yoshihiro Koyama

Ryuichi Hayama

Hiroshi Okada

A substrate immersed in pure water held inside a processing bath disposed to a cleaning unitand accordingly washed, as it bears an aqueous film on its surface, is transported by a substrate transportation mechanismto a spin-processing unit. The substrate rotates in the spin-processing unit, thereby adjusting the thickness of the aqueous film on the substrate surface. As the aqueous film is then frozen, the volume of the aqueous film expands, adhesion between the substrates and particles adhering to the substrate surface becomes weak, or further the particles are separated from the substrate surface. The substrate transportation mechanismtransports thus frozen substrate to the cleaning unitfrom the spin-processing unit, and the substrate is immersed in a processing liquid held inside the processing bath. The overflowing processing liquid thaws and removes the aqueous film, and particles on the substrate surface are discharged outside the substrate.

Substrate processing method of and substrate processing apparatus for freezing and cleaning substrate

A plating apparatus provided with: three copper dissolution tanks connected to a plating liquid circulation path for supplying copper ions to a plating liquid; a buffer container for supplying a replacement liquid into some of the copper dissolution tanks not in use; and an undiluted replacement liquid supplying section for supplying an undiluted replacement liquid as a source of the replacement liquid into the buffer container. Copper mesh members each prepared by weaving a copper wire, straight copper pipes or copper plates are accommodated as a copper source in each of the copper dissolution tanks. The copper dissolution tanks each include a detachable cartridge, in which the copper mesh members or the like are disposed.

Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method

A plating apparatus () provided with: a plating vessel (to) having a cylindrical side wall () for containing a plating liquid; a substrate holding mechanism (to) for generally horizontally holding a generally round substrate (W) to be treated; a cathode ring () provided in the substrate holding mechanism and having substantially the same inner diameter as the plating vessel for sealing a peripheral edge portion of a lower surface of the substrate, the cathode ring having a cathode () to be brought into contact with the substrate held by the substrate holding mechanism; and a rotative driving mechanism () for rotating the substrate held by the substrate holding mechanism together with the cathode ring; wherein the plating vessel has an upper edge portion complementary in configuration to a portion of the cathode ring opposed to the plating vessel so that the lower surface of the substrate held by the substrate holding mechanism can approach the plating vessel so as to be substantially flush with the upper edge of the plating vessel without interference between the upper edge portion of the plating vessel and the cathode ring.

Plating apparatus, plating cup and cathode ring

The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.

Non-destructive measuring sensor for semiconductor wafer and method of

A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.

Apparatus and method for electrical measurement of semiconductor wafers

Amounts of electric charges in a semiconductor wafer are measured by using a non-destructive measuring device. First and second flat-band voltages before and after a specific charging process are measured with a non-destructive C-V measurement device. A gap between a test electrode and a surface of a semiconductor wafer is also measured before and after performing the charging process. The electric charge accumulated proximate the surface of the semiconductor wafer is determined according to measured values of the gap and the flat-band voltages before and after performing the charging process.

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Kyoto, Japan

Hideaki Matsubara