Samsung Electronics Co., Ltd.

Heungsik Park

Doo-Young Lee

Hongsik Shin

Dohyoung Kim

Yoonhae Kim

Hwichan Jun

Wonhyuk Lee

Sughyun Sung

Chulsung Kim

Hyunjoon Roh

Johnsoo Kim

Hyoseok Choi

Dohaing Lee

Sanghyun Lee

Jung Min Kim

Dougyong Sung

Kyung-Sun Kim

Keunhee Bai

Kangmin Jeon

Tae-Hwa Kim

Younghun Choi

A semiconductor device includes a gate pattern crossing over a substrate, the gate pattern including a gate insulating layer, a gate electrode, and a gate capping pattern sequentially stacked on the substrate, a gate spacer covering a sidewall of the gate pattern, a source/drain pattern on the substrate, the source/drain pattern being adjacent to the sidewall of the gate pattern, a contact pad on the source/drain pattern, a top surface of the contact pad being lower than a top surface of the gate electrode, a source/drain contact plug on the contact pad, and a protection spacer between the gate spacer and the source/drain contact plug, the protection spacer having a ring shape enclosing the source/drain contact plug.

Semiconductor device having a ring-shaped protection spacer above a contact pad and enclosing a source/drain contact plug

Semiconductor device having a ring-shaped protection spacer enclosing a source/drain contact plug

Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

Semiconductor device

Semiconductor device with field effect transistors and method of fabricating the same

A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.

Methods of forming semiconductor device

A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.

Methods of manufacturing semiconductor devices including gate patterns with sidewall spacers and capping patterns on the sidewall spacers

Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Substrate manufacturing method and substrate manufacturing apparatus

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Yongin-si, South Korea

Heungsik Park